G11C 2013/0078
Write using current through the cell
Official title: {Write using current through the cell}
G11C2013/0078 (Write using current through the cell) appears on 829 US grants and 890 published applications in this corpus.
Search patents in G11C- Granted patents
- 829
- Published applications
- 890
- Assignees
- 170
- Inventors
- 1,149
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 0 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 0 |
| 2003 | 0 | 2 |
| 2004 | 0 | 6 |
| 2005 | 5 | 15 |
| 2006 | 13 | 26 |
| 2007 | 15 | 37 |
| 2008 | 27 | 40 |
| 2009 | 23 | 54 |
| 2010 | 39 | 46 |
| 2011 | 57 | 38 |
| 2012 | 39 | 26 |
| 2013 | 32 | 33 |
| 2014 | 33 | 21 |
| 2015 | 27 | 29 |
| 2016 | 36 | 38 |
| 2017 | 57 | 55 |
| 2018 | 40 | 44 |
| 2019 | 50 | 65 |
| 2020 | 80 | 78 |
| 2021 | 79 | 75 |
| 2022 | 53 | 61 |
| 2023 | 41 | 32 |
| 2024 | 37 | 29 |
| 2025 | 32 | 23 |
| 2026 | 8 | 17 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Techniques for multi-level chalcogenide memory cell programming11 Aug 2026US 12,706,142 B2Micron Technology, Inc.
- Configuration method for a phase-change non-volatile memory21 Apr 2026US 12,608,139 B2STMicroelectronics International N. V.
- Crossbar circuits utilizing current-mode digital-to-analog converters14 Apr 2026US 12,603,117 B2TetraMem Inc.
- Phase change element configured to increase discrete data states14 Apr 2026US 12,603,127 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Methods of controlling PCRAM devices in single-level-cell (SLC) and multi-level-cell (MLC) modes and a controller for performing the same methods14 Apr 2026US 12,603,128 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change element configured to increase discrete data states23 Jul 2026US 2026/0212924 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Phase change memory (pcm) cell with thermoelectric heating and cooling18 Jun 2026US 2026/0173776 A1International Business Machines Corporation
- Three-state programming of memory cells11 Jun 2026US 2026/0162720 A1Micron Technology, Inc.
- Method of performing program operations in phase change memories, corresponding device and computer program product4 Jun 2026US 2026/0155176 A1STMicroelectronics International N. V.
- Resistive random-access memory structure and method21 May 2026US 2026/0141950 A1GLOBALFOUNDRIES U. S. Inc.
Most cited
By later US patents
- Universal memory element and method of programming same436US 5,912,839 AEnergy Conversion Devices, Inc. · 1999
- Planar capacitor memory cell and its applications311US 7,209,384 B12007
- Programming a phase-change memory with slow quench time249US 6,487,113 B1Ovonyx, Inc. · 2002
- Memory device and method of operating same247US 6,937,507 B2Silicon Storage Technology, Inc. · 2005
- Semiconductor memory having both volatile and non-volatile functionality including resistance change material and method of operating193US 8,243,499 B2Zeno Semiconductor, Inc. · 2012