Method of performing program operations in phase change memories, corresponding device and computer program product

A method of performing write operations in a Phase Change Memory (PCM) device, wherein the PCM device comprises:

• a current pulse source configured to generate a first level of source current and to produce current pulses out of set current pulses and reset current pulses;
• and a plurality of cells arranged in a plurality of groups, wherein groups in said plurality of groups comprise respective sets of cells configured to be written via respective write operations, the method comprising:
• performing write operations via set current pulses for each set of cells comprising at least one cell to be written via a set write operation and via reset current pulses for each set of cells comprising at least one cell to be written via a reset write operation;
• time shifting the set current pulses provided to cells comprised in one group of the plurality of groups with respect to set current pulses provided to cells comprised in the other groups of the plurality of groups;
• and
• dis-overlapping the reset current pulses provided to cells comprised in one group of the plurality of groups with respect to reset current pulses provided to cells comprised in the other groups of the plurality of groups;
• and
• wherein a sum of the set current pulses and the reset current pulses provided to cells comprised in the plurality of groups at a common write time is equal to or lower than said first level of source current of the current pulse source.