C23C 16/44
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of
Official title: characterised by the method of coating (C23C16/04 takes precedence)
C23C16/44 (Chemical coating by decomposition of gaseous compounds, without leaving reaction products of) appears on 22,499 US grants and 28,505 published applications in this corpus.
Search patents in C23C- Granted patents
- 22,499
- Published applications
- 28,505
- Assignees
- 4,270
- Inventors
- 36,862
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 17 | 0 |
| 1977 | 16 | 0 |
| 1978 | 25 | 0 |
| 1979 | 20 | 0 |
| 1980 | 29 | 0 |
| 1981 | 37 | 0 |
| 1982 | 48 | 0 |
| 1983 | 46 | 0 |
| 1984 | 73 | 0 |
| 1985 | 90 | 0 |
| 1986 | 83 | 0 |
| 1987 | 104 | 0 |
| 1988 | 98 | 0 |
| 1989 | 154 | 0 |
| 1990 | 166 | 0 |
| 1991 | 158 | 0 |
| 1992 | 192 | 0 |
| 1993 | 225 | 0 |
| 1994 | 267 | 0 |
| 1995 | 283 | 0 |
| 1996 | 296 | 0 |
| 1997 | 291 | 0 |
| 1998 | 351 | 0 |
| 1999 | 401 | 0 |
| 2000 | 600 | 0 |
| 2001 | 559 | 270 |
| 2002 | 546 | 673 |
| 2003 | 495 | 754 |
| 2004 | 509 | 792 |
| 2005 | 456 | 897 |
| 2006 | 350 | 862 |
| 2007 | 338 | 789 |
| 2008 | 348 | 851 |
| 2009 | 379 | 1014 |
| 2010 | 535 | 915 |
| 2011 | 528 | 930 |
| 2012 | 553 | 963 |
| 2013 | 603 | 1015 |
| 2014 | 697 | 1035 |
| 2015 | 749 | 1339 |
| 2016 | 809 | 1285 |
| 2017 | 893 | 1305 |
| 2018 | 905 | 1288 |
| 2019 | 1049 | 1345 |
| 2020 | 1067 | 1417 |
| 2021 | 907 | 1358 |
| 2022 | 967 | 1672 |
| 2023 | 998 | 1602 |
| 2024 | 1122 | 1520 |
| 2025 | 1206 | 1507 |
| 2026 | 861 | 1107 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- C23C 16/455Characterised by the method used for introducing gases into reaction chamber or11,346
- C23C 16/50Using electric discharges5,432
- C23C 16/4401Means for minimising impurities3,758
- C23C 16/458Characterised by the method used for supporting substrates in the reaction chamber3,735
- C23C 16/52Controlling or regulating the coating process3,059
- C23C 16/448Characterised by the method used for generating reactive gas streams2,588
- C23C 16/46Characterised by the method used for heating the substrate1,949
- C23C 16/4412Details relating to the exhausts1,853
All 17 subgroupsShow fewer
- C23C 16/54Apparatus specially adapted for continuous coating1,824
- C23C 16/48By irradiation1,233
- C23C 16/4417Methods specially adapted for coating powder327
- C23C 16/442Using fluidised bed process223
- C23C 16/4411Cooling of the reaction chamber walls216
- C23C 16/453Passing the reaction gases through burners or torches171
- C23C 16/4418Methods for making free-standing articles124
- C23C 16/4414Electrochemical vapour deposition [evd]15
- C23C 16/4415Acoustic wave cvd12
Recent patents
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- Process for manufacturing silicon-containing materials in a cascade reactor system6 Oct 2026US 12,753,495 B2Wacker Chemie AG
- Method for controlling canister temperature and raw material supply device6 Oct 2026US 12,753,496 B2Jusung Engineering Co., Ltd.
- Method of forming a layer by ALD6 Oct 2026US 12,753,497 B2ASM IP Holding B. V.
- Semiconductor cleaning apparatus and method8 Oct 2026US 2026/0307113 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Hydrophilic antimicrobial diamond coating8 Oct 2026US 2026/0308049 A1United States Department of Energy
- Process for improving flash sintering of ceramics and improved ceramics8 Oct 2026US 2026/0308072 A1The Regents of the University of Colorado, a body corporate
- Fluorine-containing amorphous carbon film and method for producing same8 Oct 2026US 2026/0308753 A1Keio University
- Semiconductor process system and method of cleaning the same8 Oct 2026US 2026/0308756 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Low pressure vapor phase deposition of organic thin films1,502US 6,337,102 B12002
- Method for producing compound thin films1,267US 4,058,430 A1977
- Sequential chemical vapor deposition1,159US 5,916,365 A1999
- Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor1,063US 6,287,965 B1Samsung Electronics Co., Ltd. · 2001
- Method of forming graded thin films using alternating pulses of vapor phase reactants1,034US 6,534,395 B2ASM Microchemistry Oy · 2003