Method of forming a layer by ALD
AssigneeASM IP Holding B.V.
InventorsDieter Pierreux, Quentin Nikitas Nicolas Lionel Eric Tricas, Werner Knaepen, Alessandro Viva
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Abstract
A method of forming a layer of a material on one or more substrates by ALD is disclosed. Embodiments of the presently described method comprise performing a plurality of deposition cycles comprising at least two precursors pulses with intervening purge pulses to form the layer of the material on the one or more substrates. During each deposition cycle, a ratio of the process chamber pressure during each precursor pulse of the at least two precursor pulses to the process chamber pressure during an intervening purge pulse is equal or different from one another.
Claims24
A method of forming a layer of a material on one or more substrates by atomic layer deposition, the method comprising:
- providing the one or more substrates in a process chamber, and
- performing a plurality of deposition cycles, thereby forming the layer of the material on the one or more substrates, wherein each deposition cycle comprises at least two precursor pulses with intervening purge pulses,
- wherein
- a process chamber pressure during each deposition cycle is in a range from about 0.1 Torr to about 10 Torr and wherein, during each deposition cycle, a first ratio of the process chamber pressure during a first precursor pulse of the at least two precursor pulses to the process chamber pressure during a first intervening purge pulse is lower than a second ratio of the process chamber pressure during a second precursor pulse of the at least two precursor pulses to the process chamber pressure during a second intervening purge pulse.
Dependencies are inferred from the claim text.