C23C 16/458
Characterised by the method used for supporting substrates in the reaction chamber
Official title: characterised by the method used for supporting substrates in the reaction chamber
C23C16/458 (Characterised by the method used for supporting substrates in the reaction chamber) appears on 3,735 US grants and 5,331 published applications in this corpus.
Search patents in C23C- Granted patents
- 3,735
- Published applications
- 5,331
- Assignees
- 1,002
- Inventors
- 8,943
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 2 | 0 |
| 1982 | 2 | 0 |
| 1983 | 4 | 0 |
| 1984 | 2 | 0 |
| 1985 | 4 | 0 |
| 1986 | 2 | 0 |
| 1987 | 4 | 0 |
| 1988 | 3 | 0 |
| 1989 | 8 | 0 |
| 1990 | 7 | 0 |
| 1991 | 18 | 0 |
| 1992 | 16 | 0 |
| 1993 | 26 | 0 |
| 1994 | 33 | 0 |
| 1995 | 42 | 0 |
| 1996 | 57 | 0 |
| 1997 | 45 | 0 |
| 1998 | 53 | 0 |
| 1999 | 53 | 0 |
| 2000 | 97 | 0 |
| 2001 | 78 | 50 |
| 2002 | 86 | 92 |
| 2003 | 60 | 105 |
| 2004 | 62 | 90 |
| 2005 | 53 | 125 |
| 2006 | 32 | 106 |
| 2007 | 34 | 100 |
| 2008 | 36 | 104 |
| 2009 | 27 | 136 |
| 2010 | 71 | 136 |
| 2011 | 61 | 143 |
| 2012 | 61 | 158 |
| 2013 | 77 | 141 |
| 2014 | 96 | 154 |
| 2015 | 121 | 260 |
| 2016 | 133 | 240 |
| 2017 | 137 | 254 |
| 2018 | 163 | 293 |
| 2019 | 193 | 305 |
| 2020 | 250 | 307 |
| 2021 | 202 | 325 |
| 2022 | 236 | 402 |
| 2023 | 230 | 379 |
| 2024 | 269 | 362 |
| 2025 | 289 | 330 |
| 2026 | 191 | 234 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Injectors, liners, process kits, processing chambers, and related methods for gas flow in batch processing of semiconductor manufacturing6 Oct 2026US 12,753,500 B2APPLIED Materials.Inc.
- Substrate processing apparatus and substrate processing method6 Oct 2026US 12,753,501 B2Tokyo Electron Limited
- Film forming apparatus6 Oct 2026US 12,753,504 B2Tokyo Electron Limited
- Substrate processing device and method for cleaning substrate processing device6 Oct 2026US 12,753,506 B2Jusung Engineering Co., Ltd.
- Substrate processing apparatus6 Oct 2026US 12,753,507 B2Tokyo Electron Limited
- Reactant vapor delivery systems for semiconductor processing tools and methods8 Oct 2026US 2026/0308757 A1ASM IP Holding B. V.
- Device and method for mist chemical vapor deposition of large-size semiconductor thin film8 Oct 2026US 2026/0308759 A1Tiangong University
- Atomic layer deposition reaction chamber and an atomic layer deposition reactor1 Oct 2026US 2026/0297747 A1Beneq Oy
- Substrate stage and substrate processing apparatus1 Oct 2026US 2026/0297750 A1Tokyo Electron Limited
- Plasma and Photon assisted Metal-Organic Chemical Vapor Deposition24 Sep 2026US 2026/0286510 A1PhantaField Inc.
Most cited
By later US patents
- CVD Processing chamber1,003US 5,558,717 AAPPLIED Materials.Inc. · 1996
- Stage having electrostatic chuck and plasma processing apparatus using same921US 5,382,311 ATokyo Electron Limited · 1995
- High temperature multi-layered alloy heater assembly and related methods858US 6,035,101 AAPPLIED Materials.Inc. · 2000
- Gas introduction showerhead for an RTP chamber with upper and lower transparent plates and gas flow therebetween832US 5,781,693 AAPPLIED Materials.Inc. · 1998
- Thermally floating pedestal collar in a chemical vapor deposition chamber805US 5,846,332 AAPPLIED Materials.Inc. · 1998