Stage having electrostatic chuck and plasma processing apparatus using same

A plasma processing apparatus for processing a substrate, the substrate having a major surface to be processed and a lower surface opposite to the major surface, by using a plasma of a process gas, while holding said substrate on a stage, comprising:

• (a) a process chamber for enclosing said substrate;
• (b) means for supplying the process gas into said process chamber;
• (c) means for exhausting said process chamber and setting said process chamber in a vacuum state;
• (d) means for making the process gas into the plasma in said process chamber;
• and
• (e) said stage arranged in said process chamber, said stage comprising:
• a stage main body having a support surface for supporting said substrate through the lower surface, a groove being formed in the support surface, and a gas path communicating with the groove being formed in said stage main body;
• a thermal source incorporated in said main body to control a temperature of said substrate;
• a sheet electrostatic chuck having a lower surface airtightly adhered to the support surface to cover the groove, a plurality of through holes being formed in said electrostatic chuck, and the through holes being arranged along and above the groove;
• power supply means connected to said electrostatic chuck;
• and
• means for supplying a heat transfer gas into the gas path, the heat transfer gas being supplied between said substrate and said electrostatic chuck through the groove and the through holes to contribute to transfer of thermal energy from said thermal source to said substrate.