Plasma and Photon assisted Metal-Organic Chemical Vapor Deposition
AssigneePhantaField Inc.
InventorXuejun Xie
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Abstract
A Plasma and Photon Assisted Metal-Organic Chemical Vapor Deposition (PP-MOCVD) system for low-temperature deposition of semiconductor materials is disclosed. The system integrates a remote plasma chamber to pre-decompose high decomposition temperature precursors, a direct injection system for low-temperature precursors, a UV light source to eliminate carbon residuals and remove defects, and a rotating susceptor for uniform deposition. This method enables high-growth-rate, low-defect-density synthesis of III-V semiconductors or 2D materials, facilitating advanced semiconductor applications.
Claims5
A Plasma and Photon Assisted Metal-Organic Chemical Vapor Deposition system comprising:
- A remote plasma chamber configured to pre-decompose a high decomposition temperature precursor gas before introducing it into a deposition chamber;
- A direct precursor injection system for other precursors;
- UV light sources positioned to illuminate the substrate for the removal of carbon residuals and defects;
- A rotating susceptor to ensure uniform deposition across the substrate surface.
Dependencies are inferred from the claim text.