H10P 14/3204
Being group iva semiconducting materials
Official title: {being Group IVA semiconducting materials}
H10P14/3204 (Being group iva semiconducting materials) appears on 2,521 US grants and 2,706 published applications in this corpus.
Search patents in H10P- Granted patents
- 2,521
- Published applications
- 2,706
- Assignees
- 712
- Inventors
- 4,248
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 5 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 2 | 0 |
| 1980 | 3 | 0 |
| 1981 | 0 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 10 | 0 |
| 1986 | 14 | 0 |
| 1987 | 21 | 0 |
| 1988 | 20 | 0 |
| 1989 | 23 | 0 |
| 1990 | 12 | 0 |
| 1991 | 18 | 0 |
| 1992 | 24 | 0 |
| 1993 | 21 | 0 |
| 1994 | 22 | 0 |
| 1995 | 21 | 0 |
| 1996 | 19 | 0 |
| 1997 | 15 | 0 |
| 1998 | 30 | 0 |
| 1999 | 33 | 0 |
| 2000 | 31 | 0 |
| 2001 | 40 | 19 |
| 2002 | 36 | 61 |
| 2003 | 55 | 71 |
| 2004 | 65 | 94 |
| 2005 | 56 | 98 |
| 2006 | 69 | 113 |
| 2007 | 53 | 102 |
| 2008 | 65 | 62 |
| 2009 | 74 | 50 |
| 2010 | 60 | 74 |
| 2011 | 62 | 88 |
| 2012 | 55 | 118 |
| 2013 | 76 | 116 |
| 2014 | 117 | 122 |
| 2015 | 102 | 112 |
| 2016 | 143 | 126 |
| 2017 | 127 | 141 |
| 2018 | 114 | 122 |
| 2019 | 141 | 161 |
| 2020 | 149 | 145 |
| 2021 | 93 | 118 |
| 2022 | 81 | 136 |
| 2023 | 109 | 151 |
| 2024 | 85 | 138 |
| 2025 | 93 | 121 |
| 2026 | 49 | 47 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Quantum heterostructures, related devices and methods for manufacturing the same29 Sep 2026US 12,751,060 B2Ecole Polytechnique de Montreal
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium15 Sep 2026US 12,740,347 B2Kokusai Electric Corporation
- Integrated circuit structure and method for forming the same25 Aug 2026US 12,720,834 B2National Taiwan University
- Substrate processing method and substrate processing apparatus25 Aug 2026US 12,721,058 B2Tokyo Electron Limited
- Film forming method and film forming apparatus10 Sep 2026US 2026/0265949 A1Tokyo Electron Limited
- Systems and methods for tuning porous bandgaps to reduce thermal donor effects20 Aug 2026US 2026/0247673 A1IQE plc
- Method for producing semiconductor substrate, semiconductor substrate, and semiconductor device20 Aug 2026US 2026/0247934 A1Shin-Etsu Handotai Co., Ltd.
- Film forming method and film forming apparatus13 Aug 2026US 2026/0239897 A1Tokyo Electron Limited
- Methods for Transferring Graphene to Substrates and Related Lithographic Stacks and Laminates6 Aug 2026US 2026/0231697 A1Bard Access Systems, Inc.
Most cited
By later US patents
- Nanowire field effect transistor device having a replacement gate849US 9,472,618 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2016
- Method of manufacturing a substrate using an SiGe layer600US 6,607,948 B1Kabushiki Kaisha Toshiba · 2003
- Dopant precursors and processes596US 6,743,738 B2ASM America, Inc. · 2004
- Layer member forming method532US 6,984,595 B1Semiconductor Energy Laboratory Co.Ltd. · 2006
- SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn521US 7,598,513 B2Arizona Board of Regents, Acting for and on Behalf of Arizona State University, A Corporate Body Organized Under Arizona Law · 2009