Systems and methods for tuning porous bandgaps to reduce thermal donor effects

Abstract

A layered structure includes a substrate and a porous layer over the substrate. The substrate has a first resistivity and a first bandgap (Eg1). The porous layer has a second resistivity higher than the substrate and a second bandgap (Eg2) higher than the first bandgap (Eg1). The bandgap ratio (Eg2/Eg1) of the second bandgap (Eg2) to the first bandgap (Eg1) is at least 1.3 at an operating temperature of at least 100° C. Advantageously the bandgap ratio (Eg2/Eg1) can decrease thermal donor effects, maintain high resistivity of the porous layer, decrease harmonic losses at device operating temperatures, and increase device performance.

Dependencies are inferred from the claim text.