Dopant precursors and processes
AssigneeASM America, Inc.
InventorMichael A. Todd
Life of this patent
Estimating the term…
Abstract
Silicon alloys and doped silicon films are prepared by chemical vapor deposition and ion implantation processes using Si-containing chemical precursors as sources for Group III and Group V atoms. Preferred dopant precursors include (H3Si)3-xMRx, (H3Si)3N, and (H3Si)4N2, wherein R is H or D, x=0, 1 or 2, and M is selected from the group consisting of B, P, As, and Sb. Preferred deposition methods produce non-hydrogenated silicon alloy and doped Si-containing films, including crystalline films.
Claims40
A deposition process for making a non-hydrogenated Si-containing film, comprising:
- providing a vapor deposition chamber having a substrate disposed therein;
- introducing a dopant precursor compound to the chamber, wherein the dopant precursor compound comprises at least one silicon atom and at least one Group III or Group V atom;
- and
- depositing a non-hydrogenated Si-containing film onto the substrate.
A chemical vapor deposition process for making an at least partially crystalline Si-containing film, comprising
- providing a chemical vapor deposition chamber having a substrate disposed therein:
- introducing a silicon source and a dopant precursor compound to the chamber, wherein the dopant precursor compound is comprised of at least one silicon atom and at least one Group III or Group V atom;
- and
- (depositing a doped Si-containing film onto the substrate.
Dependencies are inferred from the claim text.