Layer member forming method

A vapor reaction method comprising the steps of:

• providing a pair of first and second electrodes within a reaction chamber, said pair of electrodes being arranged substantially in parallel with each other;
• placing a substrate in a reaction chamber on said first electrode so that a first surface of said substrate faces toward said second electrode;
• introducing a first film forming gas into said reaction chamber through said second electrode;
• exciting said first film forming gas in order to form a first film comprising silicon nitride by vapor deposition on said substrate placed in said reaction chamber;
• introducing a second film forming gas into said reaction chamber through said second electrode;
• exciting said second film forming gas in order to form a second film by vapor deposition directly on said first film in said reaction chamber;
• removing said substrate from said reaction chamber after the formation of the first and second films;
• introducing a cleaning gas comprising nitrogen fluoride into said reaction chamber through said second electrode;
• exciting said cleaning gas in order to remove unnecessary layers formed on an inside of the reaction chamber due to the formation of the first and second films.

A method of fabricating electronic devices comprising the steps of:

• providing a pair of electrodes within a reaction chamber wherein said pair of electrodes are opposed in parallel with each other;
• placing a substrate in a reaction chamber wherein said substrate is placed on said pair of electrodes so that a first surface of said substrate faces toward said second electrode;
• introducing a first film forming gas into said reaction chamber through the other one of said electrodes;
• exciting said first film forming gas to form a first film comprising silicon nitride by first chemical vapor deposition on said substrate;
• introducing a second film forming gas into said reaction chamber through the other one of said electrodes;
• exciting said second film forming gas to form a second film by second chemical vapor deposition directly on said first film, said second film comprising a different material from said first film;
• removing said substrate from said reaction chamber after the formation of said first and second films;
• introducing a cleaning gas comprising nitrogen fluoride into said reaction chamber through said other one of the electrodes;
• and
• conducting a cleaning of an inside of said reaction chamber by using said cleaning gas to remove layers caused by at least said first and second vapor phase deposition.

A method of fabricating electronic devices comprising the steps of:

• providing a pair of electrodes within a reaction chamber wherein said pair of electrodes are opposed in parallel with each other;
• placing a substrate in a reaction chamber wherein said substrate is held by one of said electrodes so that a first surface of said substrate faces toward said second electrode;
• introducing a first film forming gas into said reaction chamber through the other one of said electrodes;
• exciting said first film forming gas to form a first film comprising silicon nitride by first chemical vapor deposition on said substrate;
• introducing a second film forming gas into said reaction chamber through the other one of said electrodes;
• exciting said second film forming gas to form a second film by second chemical vapor deposition directly on said first film wherein said second film comprises a different material from said first film;
• removing said substrate from said reaction chamber after the formation of said first and second films;
• introducing a cleaning gas comprising nitrogen fluoride into said reaction chamber through said other one of the electrodes;
• and
• conducting a cleaning of an inside of said reaction chamber by using said cleaning gas to remove layers caused by at least said first and second vapor phase deposition, wherein one of the first and second films comprises silicon nitride.