H10P 14/20
Formation of materials: of semiconductor materials
Official title: of semiconductor materials
H10P14/20 (Formation of materials: of semiconductor materials) appears on 23,966 US grants and 26,889 published applications in this corpus.
Search patents in H10P- Granted patents
- 23,966
- Published applications
- 26,889
- Assignees
- 3,328
- Inventors
- 29,422
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 47 | 0 |
| 1977 | 36 | 0 |
| 1978 | 42 | 0 |
| 1979 | 44 | 0 |
| 1980 | 44 | 0 |
| 1981 | 32 | 0 |
| 1982 | 33 | 0 |
| 1983 | 43 | 0 |
| 1984 | 57 | 0 |
| 1985 | 80 | 0 |
| 1986 | 80 | 0 |
| 1987 | 93 | 0 |
| 1988 | 80 | 0 |
| 1989 | 130 | 0 |
| 1990 | 83 | 0 |
| 1991 | 109 | 0 |
| 1992 | 109 | 0 |
| 1993 | 147 | 0 |
| 1994 | 141 | 0 |
| 1995 | 136 | 0 |
| 1996 | 121 | 0 |
| 1997 | 118 | 0 |
| 1998 | 171 | 0 |
| 1999 | 213 | 0 |
| 2000 | 201 | 0 |
| 2001 | 255 | 128 |
| 2002 | 303 | 449 |
| 2003 | 327 | 526 |
| 2004 | 365 | 491 |
| 2005 | 330 | 614 |
| 2006 | 401 | 654 |
| 2007 | 373 | 649 |
| 2008 | 395 | 658 |
| 2009 | 447 | 712 |
| 2010 | 573 | 927 |
| 2011 | 648 | 1070 |
| 2012 | 683 | 1097 |
| 2013 | 847 | 1229 |
| 2014 | 1185 | 1454 |
| 2015 | 1356 | 1704 |
| 2016 | 1631 | 1606 |
| 2017 | 1570 | 1714 |
| 2018 | 1421 | 1439 |
| 2019 | 1487 | 1608 |
| 2020 | 1426 | 1637 |
| 2021 | 1218 | 1389 |
| 2022 | 1050 | 1324 |
| 2023 | 912 | 1236 |
| 2024 | 973 | 1121 |
| 2025 | 926 | 970 |
| 2026 | 474 | 483 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10P 14/34Deposited materials21,470
- H10P 14/29Characterised by the substrates12,158
- H10P 14/32Characterised by intermediate layers between substrates and deposited layers9,178
- H10P 14/24Using chemical vapour deposition [cvd]7,857
- H10P 14/38Characterised by treatments done after the formation of the materials5,015
- H10P 14/27Using selective deposition4,149
- H10P 14/22Using physical deposition2,041
- H10P 14/36Characterised by treatments done before the formation of the materials1,614
All 10 subgroupsShow fewer
Recent patents
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Non-volatile memory device having primary memory layer with oxygen gradient6 Oct 2026US 12,757,411 B2Nanyang Technological University
- Enhancement-mode HEMT and manufacturing process of the same6 Oct 2026US 12,757,427 B2STMicroelectronics S,r.l.
- Semiconductor device and method of manufacturing the same6 Oct 2026US 12,757,472 B2Samsung Electronics Co., Ltd.
- Method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate6 Oct 2026US 12,757,645 B2Robert Bosch GmbH
- Device and method for mist chemical vapor deposition of large-size semiconductor thin film8 Oct 2026US 2026/0308759 A1Tiangong University
- Semiconductor device and manufacturing method thereof8 Oct 2026US 2026/0313928 A1National Taiwan University
- Multi-gate device fabrication and structures thereof8 Oct 2026US 2026/0313936 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Raised source/drain oxide semiconducting thin film transistor and methods of making the same8 Oct 2026US 2026/0313959 A1Taiwan Semiconductor Manufacturing Company.Ltd
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby3,970US 7,402,506 B2Eastman Kodak Company · 2008
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008