H10P 14/38
Characterised by treatments done after the formation of the materials
Official title: {characterised by treatments done after the formation of the materials}
H10P14/38 (Characterised by treatments done after the formation of the materials) appears on 5,015 US grants and 4,913 published applications in this corpus.
Search patents in H10P- Granted patents
- 5,015
- Published applications
- 4,913
- Assignees
- 1,008
- Inventors
- 6,846
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 1 | 0 |
| 1978 | 3 | 0 |
| 1979 | 4 | 0 |
| 1980 | 3 | 0 |
| 1981 | 3 | 0 |
| 1982 | 6 | 0 |
| 1983 | 8 | 0 |
| 1984 | 10 | 0 |
| 1985 | 14 | 0 |
| 1986 | 13 | 0 |
| 1987 | 20 | 0 |
| 1988 | 17 | 0 |
| 1989 | 23 | 0 |
| 1990 | 7 | 0 |
| 1991 | 19 | 0 |
| 1992 | 15 | 0 |
| 1993 | 25 | 0 |
| 1994 | 32 | 0 |
| 1995 | 37 | 0 |
| 1996 | 40 | 0 |
| 1997 | 49 | 0 |
| 1998 | 76 | 0 |
| 1999 | 114 | 0 |
| 2000 | 106 | 0 |
| 2001 | 116 | 58 |
| 2002 | 138 | 189 |
| 2003 | 140 | 197 |
| 2004 | 181 | 225 |
| 2005 | 150 | 282 |
| 2006 | 194 | 256 |
| 2007 | 187 | 254 |
| 2008 | 183 | 211 |
| 2009 | 192 | 183 |
| 2010 | 214 | 205 |
| 2011 | 194 | 211 |
| 2012 | 138 | 163 |
| 2013 | 184 | 181 |
| 2014 | 212 | 225 |
| 2015 | 203 | 256 |
| 2016 | 276 | 276 |
| 2017 | 258 | 264 |
| 2018 | 219 | 224 |
| 2019 | 205 | 217 |
| 2020 | 198 | 209 |
| 2021 | 156 | 153 |
| 2022 | 115 | 130 |
| 2023 | 115 | 108 |
| 2024 | 83 | 111 |
| 2025 | 71 | 81 |
| 2026 | 47 | 44 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate6 Oct 2026US 12,757,645 B2Robert Bosch GmbH
- Method of increasing sensitivity and limits of detection and controlling fluid flow over sensor and sensor array6 Oct 2026US 12,757,650 B2The United States of America as represented by the Secretary of the Air Force
- Semiconductor layer, method for manufacturing same, and transistor comprising same22 Sep 2026US 12,745,575 B2Hansol Chemical Co., Ltd.
- Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium15 Sep 2026US 12,740,347 B2Kokusai Electric Corporation
- Film forming method and film forming apparatus15 Sep 2026US 12,740,349 B2Tokyo Electron Limited
- Fast recovery diode and method for manufacturing the same1 Oct 2026US 2026/0304855 A1MagnaChip Semiconductor, Ltd.
- Three dimensional integrated circuit and fabrication thereof1 Oct 2026US 2026/0304867 A1National Yang Ming.Chiao Tung University
- Fin structure with reduced defects and manufacturing method thereof1 Oct 2026US 2026/0305194 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device and method for manufacturing semiconductor device24 Sep 2026US 2026/0293254 A1Denso Corporation
- Conveyance apparatus, laser irradiation apparatus, conveyance method, and method for manufacturing semiconductor device24 Sep 2026US 2026/0293594 A1Jsw Aktina System Co., Ltd.
Most cited
By later US patents
- Semiconductor device and manufacturing method thereof4,349US 7,674,650 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Semiconductor device and manufacturing method thereof4,064US 7,732,819 B2Semiconductor Energy Laboratory Co.Ltd. · 2010
- Method of fabricating oxide semiconductor device3,948US 7,468,304 B2Canon Kabushiki Kaisha · 2008
- Method for manufacturing a semiconductor device1,352US 5,643,826 ASemiconductor Energy Laboratory Co.Ltd. · 1997
- Apparatus and method for forming semiconductor contacts1,331US 8,772,109 B2Taiwan Semiconductor Manufacturing Company.Ltd · 2014