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US 7,468,304 B2Granted
Method of fabricating oxide semiconductor device
AssigneeCanon Kabushiki Kaisha
InventorsNobuyuki Kaji, Hisato Yabuta
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Abstract
A method for fabricating a device using an oxide semiconductor, including a process of forming the oxide semiconductor on a substrate and a process of changing the conductivity of the oxide semiconductor by irradiating a predetermined region thereof with an energy ray.
Claims6
A method for fabricating a device using an oxide semiconductor, the method comprising the steps of:
- forming the oxide semiconductor on a substrate;
- and
- changing the conductivity of the oxide semiconductor by irradiating a predetermined region of the oxide semiconductor with an energy ray;
- wherein the process of changing the conductivity of the oxide semiconductor comprises the steps of:
- bringing a photocatalyst into contact with the predetermined region of the oxide semiconductor;
- and
- decreasing the conductivity of the oxide semiconductor by irradiating the photocatalyst with light having an energy equal to or greater than the optical band-gap of the photocatalyst.
4 more elements
Dependencies are inferred from the claim text.