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US 12,740,347 B2Granted
Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
AssigneeKokusai Electric Corporation
InventorsMasahiro Takahashi, Hideki Horita
Life of this patent
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Abstract
There is included (a) forming a chlorine-containing semiconductor layer on an insulating film provided on a surface of a substrate by supplying a first gas containing a semiconductor element and chlorine to the substrate; and (b) forming a semiconductor film on the chlorine-containing semiconductor layer by supplying a second gas containing a semiconductor element to the substrate, wherein a chlorine concentration in the chlorine-containing semiconductor layer formed in (a) is made 1.0×1020 atoms/cm3 or more and 1.0×1022 atoms/cm3 or less.
Claims17
A method of processing a substrate, comprising:
- (a) forming a chlorine-containing semiconductor layer on an insulating film provided on a surface of the substrate by supplying a first gas containing a semiconductor element and chlorine to the substrate;
- and
- (b) forming a semiconductor film on the chlorine-containing semiconductor layer by supplying a second gas containing a semiconductor element to the substrate,
- wherein a chlorine concentration in the chlorine-containing semiconductor layer formed in (a) is made 1.0×1020 atoms/cm3 or more and 1.0×1022 atoms/cm3 or or less,
- wherein the chlorine-containing semiconductor layer constitutes an interface between the insulating film and the semiconductor film, and
- wherein each of the insulating film and the semiconductor film is chlorine-free.
3 more elements
Dependencies are inferred from the claim text.