Film forming method and film forming apparatus
AssigneeTokyo Electron Limited
InventorsYoshihiro Takezawa, Toru Kanazawa, Yosuke Watanabe, Tatsuya Miyahara, Yuki Tanabe, Daisuke Suzuki, Masahisa Watanabe, Keisuke Suzuki, Tuhin Shuvra Basu
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Abstract
A film forming method includes preparing a substrate having an amorphous silicon film on a surface thereof, diffusing nickel into the amorphous silicon film by supplying a nickel source gas to the amorphous silicon film, and forming a polycrystalline silicon film by heating the amorphous silicon film, and crystallizing the amorphous silicon film by metal-induced lateral crystallization using the nickel diffused in the amorphous silicon film as a nucleus.
Claims12
A film forming method comprising:
- preparing a substrate having an amorphous silicon film on a surface thereof;
- diffusing nickel into the amorphous silicon film by supplying a nickel source gas to the amorphous silicon film;
- and
- forming a polycrystalline silicon film by heating the amorphous silicon film, and crystallizing the amorphous silicon film by metal-induced lateral crystallization using the nickel diffused in the amorphous silicon film as a nucleus.
A film forming apparatus comprising:
- a processing chamber configured to accommodate a substrate having an amorphous silicon film on a surface thereof;
- a nickel source supply configured to vaporize a liquid nickel source or sublimate a solid nickel source to generate a nickel source gas, and supply the nickel source gas to the amorphous silicon film on the substrate accommodated inside the processing chamber to diffuse nickel into the amorphous silicon film;
- and
- a heater configured to heat the amorphous silicon film on the substrate accommodated inside the processing chamber, and form a polycrystalline silicon film by crystallizing the amorphous silicon film by metal-induced lateral crystallization using the nickel diffused in the amorphous silicon film as a nucleus.
Dependencies are inferred from the claim text.