Method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate

A method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate, wherein the monocrystalline silicon carbide substrate has a substrate thickness in a range between 50 μm and 100 μm, comprising the following steps:

• depositing a silicon layer onto the polycrystalline silicon carbide substrate using physical vapor deposition;
• depositing a germanium layer onto the monocrystalline silicon carbide substrate using additional physical vapor deposition;
• connecting the silicon layer and the germanium layer using a first laser, wherein for the connecting, laser beams are coupled in through the polycrystalline silicon carbide substrate, wherein a connection layer is formed by a laser-induced solid-state reaction between the silicon layer and the germanium layer, wherein the connection layer is located between the silicon layer and the germanium layer;
• creating active regions of the silicon carbide semiconductor component on or within the monocrystalline silicon carbide substrate, wherein for the creating, high temperature processes are performed using a second laser having a wavelength of approximately 350 nm and an energy density of 0.5 J/cm2 to 5 J/cm2·;
• depositing a glass substrate onto the active regions of the silicon carbide semiconductor component, wherein the glass substrate is connected to the active regions using an adhesion layer;
• and
• removing the connection layer using a third laser, wherein for the removing, laser beams are coupled in through the polycrystalline silicon carbide substrate.