Fast recovery diode and method for manufacturing the same

Abstract

A method for manufacturing a fast recovery diode includes forming an epitaxial layer on a substrate, forming a P-type guard ring by implanting P-type ions into a portion of the epitaxial layer, forming a field oxide layer on the P-type guard ring, forming a P-type low-concentration doping region within the epitaxial layer, forming a P-type high-concentration doping region on the P-type low-concentration doping region, forming an anode electrode to overlap the P-type high-concentration doping region and a portion of the field oxide layer, performing electron beam irradiation after forming the anode electrode, performing helium irradiation after performing the electron beam irradiation, and forming a cathode electrode below the substrate.

Dependencies are inferred from the claim text.