Semiconductor device and method for manufacturing semiconductor device
AssigneesFuji Electric Co., Ltd., Denso Corporation
InventorNaoyuki OHSE
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Abstract
There is provided a semiconductor device including: a SiC substrate which has an upper surface and a lower surface; an element structure which is formed on the upper surface of the SiC substrate; a lower surface region which is exposed on at least a part of the lower surface of the SiC substrate, and which has a crystal structure different from that on an upper surface side; and a lower surface electrode which is in contact with the lower surface of the SiC substrate, in a region including at least the lower surface region, in which the lower surface region includes 3C-SiC, and a silicide layer is not formed between the lower surface electrode and the lower surface of the SiC substrate.
Claims20
A semiconductor device comprising:
- a SiC substrate which has an upper surface and a lower surface;
- an element structure which is formed on the upper surface of the SiC substrate;
- a lower surface region which is exposed on at least a part of the lower surface of the SiC substrate, and which has a crystal structure different from that on an upper surface side;
- and
- a lower surface electrode which is in contact with the lower surface of the SiC substrate, in a region including at least the lower surface region, wherein
- the lower surface region includes 3C-SiC, and
- a silicide layer is not formed between the lower surface electrode and the lower surface of the SiC substrate.
A method for manufacturing a semiconductor device comprising:
- performing back grinding on a lower surface of a SiC substrate, and thinning the SiC substrate;
- and
- performing laser annealing on a crushed layer generated by the back grinding to cause crystallization, and forming a lower surface region including 3C-SiC;
- and
- forming a lower surface electrode at the lower surface region.
Dependencies are inferred from the claim text.