H10P 14/3824
Intermixing, interdiffusion or disordering of iii-v heterostructures
Official title: {Intermixing, interdiffusion or disordering of III-V heterostructures, e.g. IILD}
H10P14/3824 (Intermixing, interdiffusion or disordering of iii-v heterostructures) appears on 61 US grants and 36 published applications in this corpus.
Search patents in H10P- Granted patents
- 61
- Published applications
- 36
- Assignees
- 38
- Inventors
- 145
- Latest grant
- 23 Sep 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 1 | 0 |
| 1987 | 3 | 0 |
| 1988 | 3 | 0 |
| 1989 | 4 | 0 |
| 1990 | 0 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 4 | 0 |
| 1994 | 3 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 2 | 0 |
| 1999 | 0 | 0 |
| 2000 | 1 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 5 |
| 2003 | 2 | 2 |
| 2004 | 2 | 3 |
| 2005 | 2 | 2 |
| 2006 | 4 | 1 |
| 2007 | 1 | 3 |
| 2008 | 0 | 1 |
| 2009 | 1 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 2 |
| 2014 | 0 | 1 |
| 2015 | 2 | 3 |
| 2016 | 4 | 4 |
| 2017 | 1 | 2 |
| 2018 | 4 | 1 |
| 2019 | 2 | 1 |
| 2020 | 2 | 0 |
| 2021 | 0 | 1 |
| 2022 | 0 | 3 |
| 2023 | 1 | 0 |
| 2024 | 0 | 0 |
| 2025 | 3 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method of laser treatment of a semiconductor wafer comprising AlGaInP-LEDs to increase their light generating efficiency23 Sep 2025US 12,426,404 B2OSRAM Opto Semiconductors GmbH
- Light-emitting diode display device and manufacturing method thereof27 May 2025US 12,315,865 B2Samsung Electronics Co., Ltd.
- Optoelectronic component, semiconductor structure and method6 May 2025US 12,294,039 B2OSRAM Opto Semiconductors GmbH
- Method of forming lateral pn junctions in III-nitrides using p-type and n-type co-doping and selective p-type activation and deactivation19 Dec 2023US 11,848,359 B2Ohio State Innovation Foundation
- Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures22 Sep 2020US 10,784,104 B2Uchicago Argonne, LLC
- Method for making semiconductor device including an enriched silicon 28 epitaxial layer30 Apr 2026US 2026/0123299 A1Atomera Incorporated
- Optoelectronic component, semiconductor structure and method24 Nov 2022US 2022/0376134 A1OSRAM Opto Semiconductors GmbH
- Method of Laser Treatment of a Semiconductor Wafer Comprising AlGaInP-LEDs to Increase their Light Generating Efficiency28 Jul 2022US 2022/0238752 A1OSRAM Opto Semiconductors GmbH
- Light-emitting diode display device and manufacturing method thereof24 Mar 2022US 2022/0093824 A1Samsung Electronics Co., Ltd.
- Method of forming lateral pn junctions in iii-nitrides using p-type and n-type co-doping and selective p-type activation and deactivation23 Sep 2021US 2021/0296449 A1Ohio State Innovation Foundation
Most cited
By later US patents
- Semiconductor device with disordered active region104US 4,594,603 AThe Board of Trustees of the University of Illinois · 1986
- Semiconductor laser or array formed by layer intermixing55US 5,708,674 AXerox Corporation · 1998
- Semiconductor device fabrication with disordering elements introduced into active region53US 4,511,408 AThe Board of Trustees of the University of Illinois · 1985
- Method for producing integrated semiconductor light emitter50US 4,378,255 AUniversity of Illinois Foundation · 1983
- Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor42US 4,639,275 AThe Board of Trustees of the University of Illinois · 1987