Forming disordered layer by controlled diffusion in heterojunction III-V semiconductor
AssigneeThe Board of Trustees of the University of Illinois
InventorNick Holonyak, Jr.
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Abstract
A method is disclosed for converting a multilayer semiconductor structure, that includes active semiconductor regions interposed between semiconductor barrier layers, into a disordered alloy by introduction of a specified disordering element into the multilayer structure. Devices made using the method are also disclosed.
Claims23
A method for converting a multilayer semiconductor structure, which comprises first active semiconductor regions interposed between second semiconductor barrier layers, into a disordered alloy of both said first and second semiconductors, said alloy exhibiting a higher energy gap than said first active semiconductor region, the method comprising diffusing a disordering element, selected from the group consisting of silicon, germanium, and tin, into said multilayer structure said diffusing being performed at a temperature in the range between about 700.degree. C. and 850.degree. C.
A method of integrating a semiconductor device into a monolithic structure, at least a portion of said device including a heterojunction multilayer structure, comprising the steps of:
- constructing a heterojunction semiconductor device which includes first active semiconductor regions interposed between second semiconductor barrier layers;
- masking portions of said device;
- and
- diffusing a disordering element, selected from the group consisting of silicon, germanium, and tin into unmasked portions of said device to cause said active barrier regions to compositionally disorder to a higher energy gap material than said active semiconductor regions said diffusing being performed at a temperature in the range between about 700.degree. C. and 850.degree. C.
A method of making a semiconductor structure, comprising the steps of:
- forming a semiconductor structure which includes a first active semiconductor region disposed on a second semiconductor barrier layer, said region being sufficiently thin to exhibit quantum size effects;
- diffusing a disording element, selected from the group consisting of silicon, germanium, and tin, into said semiconductor structure to obtain a disordered alloy of both said first and second semiconductors, said alloy exhibiting a higher energy gap than said first active semiconductor region, said diffusing being performed at a temperature in the range between about 700.degree. C. and 850.degree. C.
Dependencies are inferred from the claim text.