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US 4,594,603 AGranted
Semiconductor device with disordered active region
AssigneeThe Board of Trustees of the University of Illinois
InventorNick Holonyak, Jr.
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Abstract
A semiconductor device is disclosed, which includes a disordered alloy converted from at least a first active semiconductor region and a second semiconductor barrier layer that have been disordered by introduction of a disordering element selected from the group consisting of silicon and krypton such that the alloy exhibits a higher energy gap than the first active semiconductor region.
Claims10
A semiconductor device, comprising;
- a semiconductor support layer;
- a disordered alloy converted from at least a first active semiconductor region and a second semiconductor barrier layer that have been disordered by introduction of a disordering element selected from the group consisting of silicon and krypton such that the alloy exhibits a higher energy gap than the first active semiconductor region.
Dependencies are inferred from the claim text.