Interfacial control of oxygen vacancy doping and electrical conduction in thin film oxide heterostructures

A method of controlling oxygen vacancy distribution in a hetero structure, comprising:

• applying an electric field to the heterostructure, the heterostructure having an oxygen ion conductor substrate and an oxide semiconductor layer with an interface there between, with a first electrode at a first end in contact with both the oxygen ion conductor substrate and the semiconductor layer and a second electrode at a second end in contact with both the oxygen ion conductor substrate and the semiconductor layer;
• moving oxygen ions from the oxide semiconductor layer to the oxygen ion conductor substrate;
• developing an applied current moving parallel to a longitudinal axis of the interface from the first electrode to the second electrode;
• developing a voltage component orthogonal to the applied current;
• wherein the conductance of the oxide semiconductor layer is increased by application of the electric field.