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US 2026/0123299 A1Published application
Method for making semiconductor device including an enriched silicon 28 epitaxial layer
AssigneeAtomera Incorporated
InventorsMarek HYTHA, Nyles Wynn CODY, Keith Doran WEEKS, Robert J. MEARS
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Abstract
A method for making a semiconductor device may include growing 28Si on a semiconductor layer, intermixing the 28Si in the semiconductor layer, and thinning the semiconductor layer after intermixing. The method may further include repeating growing, intermixing, and thinning until a concentration of 28Si in the semiconductor layer reaches a target concentration.
Claims20
A method for making a semiconductor device comprising:
- growing 28Si on a semiconductor layer;
- intermixing the 28Si in the semiconductor layer;
- thinning the semiconductor layer after intermixing;
- and
- repeating growing, intermixing, and thinning until a concentration of 28Si in the semiconductor layer reaches a target concentration.
2 more elements
A method for making a semiconductor device comprising:
- growing 28Si on a semiconductor layer;
- intermixing the 28Si in the semiconductor layer by forming at least one non-semiconductor monolayer on the semiconductor layer;
- thinning the semiconductor layer after intermixing;
- repeating growing, intermixing, and thinning until a concentration of 28Si in the semiconductor layer reaches a target concentration;
- and
- forming a metal oxide semiconductor field effect transistor (MOSFET) above the semiconductor layer after the concentration of 28Si in the semiconductor layer reaches the target concentration.
3 more elements
A method for making a semiconductor device comprising:
- growing 28Si on a semiconductor layer;
- intermixing the 28Si in the semiconductor layer by forming at least one non-semiconductor monolayer on the semiconductor layer;
- thinning the semiconductor layer after intermixing;
- repeating growing, intermixing, and thinning until a concentration of 28Si in the semiconductor layer reaches a target concentration;
- and
- forming a quantum bit (qubit) device above the semiconductor layer after the concentration of 28Si in the semiconductor layer reaches the target concentration.
3 more elements
Dependencies are inferred from the claim text.