Method of forming lateral pn junctions in iii-nitrides using p-type and n-type co-doping and selective p-type activation and deactivation
AssigneeOhio State Innovation Foundation
InventorsSiddharth Rajan, Mohammad Wahidur Rahman, Hareesh Chandrasekar
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Abstract
Methods are provided of selectively obtaining n-type and p-type regions from the same III-Nitride layer deposited on a substrate without using diffusion or ion-implantation techniques. The III-Nitride layer is co-doped simultaneously with n-type and p-type dopants, with p-type dopant concentration higher than n-type dopant to generate p-n junctions. The methods rely on obtaining activated p-type dopants only in selected regions to generate p-type layers, whereas the rest of the regions effectively behave as an n-type layer by having deactivated p-type dopant atoms.
Claims22
A semiconductor structure comprising:
- a first region doped with a p-type dopant, an n-type dopant, and a passivating species, such that the passivating species deactivates an acceptor, and an active p-type dopant concentration is less than an active donor concentration (ND), thus creating a n-type layer;
- and
- a second region adjacent the first region, wherein the second region is doped with the p-type dopant, the n-type dopant, and wherein the concentration of the passivating species is lower than the first region so that a p-type dopant concentration is higher than the active donor concentration (ND), thus creating a p-type layer.
A semiconductor structure comprising:
- a first region doped with a p-type dopant, a compositionally graded III-Nitride alloy that creates positive polarization charge in first region, and a passivating species, such that the passivating species deactivates an acceptor, and an active p-type dopant concentration is less than a positive polarization charge (NDP), thus creating a n-type layer;
- and
- a second region adjacent the first region, wherein the second region is doped with the p-type dopant, the compositionally graded III-Nitride alloy that creates positive polarization charge in the second region, and wherein the concentration of the passivating species is lower than the first region so that the p-type dopant concentration is higher than the positive polarization charge concentration (NDP), thus creating a p-type layer.
Dependencies are inferred from the claim text.