Optoelectronic component, semiconductor structure and method

A semiconductor structure, comprising:

• an n-doped layer;
• a p-doped layer doped with a first dopant;
• and
• an active layer disposed between the n-doped layer and the p-doped layer and having at least one quantum well, wherein the active layer of the semiconductor structure is divided into a plurality of first optically active regions, at least one second region, and at least one third region;
• wherein the plurality of first optically active regions are spaced apart in a hexagonal pattern;
• wherein the at least one quantum well in the active layer comprises a larger band gap in the at least one second region than in the plurality of first optically active regions and the at least one third region;
• wherein the larger band gap is modified by quantum well intermixing;
• wherein the at least one second region encloses the plurality of first optically active regions;
• and
• wherein the at least one third region is disposed in spaces between the plurality of first optically active regions.

A method of manufacturing a semiconductor structure, comprising:

• providing a semiconductor structure having an n-doped layer, a p-doped layer doped with a first dopant, and an active layer disposed therebetween;
• applying a mask to the p-doped layer to define a plurality of first optically active regions in the active layer surrounded by at least one second region of the active layer and to define at least one third region disposed in interstices between the plurality of first optically active regions;
• and
• generating quantum well intermixing in the at least one second region of the active layer.