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US 12,315,865 B2Granted
Light-emitting diode display device and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJunhee Choi, Jinjoo Park, Kiho Kong, Junghun Park, Eunsung Lee
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Abstract
A display device includes an ion implantation region, a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer. The ion implantation region includes a plurality of ions and partitions the active layer into a plurality of light-emitting regions, and an average ion concentration ratio of each of the light-emitting regions is 2 to 15.
Claims20
A display device comprising:
- a first semiconductor layer;
- an active layer under the first semiconductor layer;
- a second semiconductor layer under the active layer;
- and
- an ion implantation region comprising a plurality of ions, the ion implantation region partitioning the active layer into a plurality of light-emitting regions,
- wherein an average ion concentration ratio of the plurality of light-emitting regions is 2 to 15,
- wherein the depth of an ion concentration peak where a concentration of implanted ions is the maximum is less than the thickness of the second semiconductor layer and the depth of the ion concentration peak is greater than a distance from a position of the ion concentration peak to a driving layer direction surface of the active layer.
4 more elements
A display device comprising:
- a first semiconductor layer;
- an active layer under the first semiconductor layer;
- a second semiconductor layer under the active layer;
- and
- an ion implantation region in the second semiconductor layer and the active layer to form a first light-emitting region separated from a second light-emitting region,
- wherein a concentration peak of ions implanted into the ion implantation region is located at a level below an upper surface of the second semiconductor layer and wherein the depth of an ion concentration peak where a concentration of implanted ions is the maximum is less than the thickness of the second semiconductor layer and the depth of the ion concentration peak is greater than a distance from a position of the ion concentration peak to a driving layer direction surface of the active layer, and
- wherein an average ion concentration ratio of the first light-emitting region and the second light-emitting region is 2 to 15.
4 more elements
An electronic apparatus comprising:
- a display device configured to output image information;
- and a processor configured to control an operation of the display device and transmit image information to the display device,
- wherein the display device comprises:
- a first semiconductor layer;
- an active layer under the first semiconductor layer;
- a second semiconductor layer under the active layer;
- and
- an ion implantation region comprising a plurality of ions, the ion implantation region partitioning the active layer into a plurality of light-emitting regions, the ion implantation region separating the plurality of light-emitting regions from each other,
- wherein the depth of an ion concentration peak where a concentration of implanted ions is the maximum is less than the thickness of the second semiconductor layer and the depth of the ion concentration peak is greater than a distance from a position of the ion concentration peak to a driving layer direction surface of the active layer,
- wherein an average ion concentration ratio of the plurality of light-emitting regions is 2 to 15.
7 more elements
A display device comprising:
- a semiconductor layer;
- an active layer on the semiconductor layer;
- and
- a plurality of ions in the semiconductor layer and the active layer,
- wherein a light-emitting region of the display device comprises a first portion of the semiconductor layer and a second portion of the active layer, the second portion being directly in contact with the first portion, and the light-emitting region includes a first light-emitting sub-region and a second light-emitting sub-region;
- a second semiconductor layer under the active layer, and
- wherein a concentration of the plurality of ions in the light-emitting region is less than a concentration of the plurality of ions in a non-light-emitting region of the display device,
- wherein the non-light emitting region separates the first light-emitting sub-region from the second light-emitting sub-region, and
- wherein the depth of an ion concentration peak where a concentration of implanted ions is the maximum is less than the thickness of the second semiconductor layer and the depth of the ion concentration peak is greater than a distance from a position of the ion concentration peak to a driving layer direction surface of the active layer,
- wherein an average ion concentration ratio of the light-emitting region is 2 to 15.
7 more elements
Dependencies are inferred from the claim text.