Light-emitting diode display device and manufacturing method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsJunhee Choi, Jinjoo Park, Kiho Kong, Junghun Park, Eunsung Lee
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Abstract
A display device includes an ion implantation region, a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer. The ion implantation region includes a plurality of ions and partitions the active layer into a plurality of light-emitting regions, and an average ion concentration ratio of each of the light-emitting regions is 2 to 15.
Claims28
A display device comprising:
- a first semiconductor layer;
- an active layer under the first semiconductor layer;
- a second semiconductor layer under the active layer;
- and
- an ion implantation region comprising a plurality of ions, the ion implantation region partitioning the active layer into a plurality of light-emitting regions,
- wherein an average ion concentration ratio of the plurality of light-emitting regions is 2 to 15.
A display device comprising:
- a first semiconductor layer;
- an active layer under the first semiconductor layer;
- a second semiconductor layer under the active layer;
- and
- an ion implantation region on the second semiconductor layer and the active layer,
- wherein a concentration peak of ions implanted into the ion implantation region is located at a level below an upper surface of the second semiconductor layer.
A method of manufacturing a display device, the method comprising:
- forming an active layer on a first semiconductor layer;
- forming a second semiconductor layer on the active layer;
- forming a mask for ion implantation on the second semiconductor layer;
- and
- implanting ions into an open area of the mask,
- wherein the implanting of the ions is performed at a process temperature of 75° C. to 130° C.
An electronic apparatus comprising:
- a display device configured to output image information;
- and
- a processor configured to control an operation of the display device and transmit image information to the display device,
- wherein the display device comprises:
- a first semiconductor layer;
- an active layer under the first semiconductor layer;
- a second semiconductor layer under the active layer;
- and
- an ion implantation region comprising a plurality of ions, the ion implantation region partitioning the active layer into a plurality of light-emitting regions,
- wherein an average ion concentration ratio of the plurality of light-emitting regions is 2 to 15.
A display device comprising:
- a semiconductor layer;
- an active layer on the semiconductor layer;
- and
- a plurality of ions in the semiconductor layer and the active layer,
- wherein a light-emitting region of the display device comprises a first portion of the semiconductor layer and a second portion of the active layer, the second portion being directly under the first portion, and
- wherein a concentration of the plurality of ions in the light-emitting region is less than a concentration of the plurality of ions in a non-light-emitting region of the display device.
Dependencies are inferred from the claim text.