H10P 14/29
Characterised by the substrates
Official title: {characterised by the substrates}
H10P14/29 (Characterised by the substrates) appears on 12,158 US grants and 12,699 published applications in this corpus.
Search patents in H10P- Granted patents
- 12,158
- Published applications
- 12,699
- Assignees
- 2,287
- Inventors
- 17,361
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 42 | 0 |
| 1977 | 32 | 0 |
| 1978 | 38 | 0 |
| 1979 | 39 | 0 |
| 1980 | 34 | 0 |
| 1981 | 27 | 0 |
| 1982 | 28 | 0 |
| 1983 | 35 | 0 |
| 1984 | 49 | 0 |
| 1985 | 69 | 0 |
| 1986 | 67 | 0 |
| 1987 | 83 | 0 |
| 1988 | 71 | 0 |
| 1989 | 115 | 0 |
| 1990 | 76 | 0 |
| 1991 | 96 | 0 |
| 1992 | 100 | 0 |
| 1993 | 131 | 0 |
| 1994 | 131 | 0 |
| 1995 | 116 | 0 |
| 1996 | 105 | 0 |
| 1997 | 99 | 0 |
| 1998 | 148 | 0 |
| 1999 | 186 | 0 |
| 2000 | 165 | 0 |
| 2001 | 217 | 109 |
| 2002 | 263 | 380 |
| 2003 | 276 | 458 |
| 2004 | 301 | 392 |
| 2005 | 277 | 483 |
| 2006 | 321 | 522 |
| 2007 | 292 | 496 |
| 2008 | 301 | 451 |
| 2009 | 349 | 440 |
| 2010 | 392 | 572 |
| 2011 | 426 | 615 |
| 2012 | 428 | 643 |
| 2013 | 478 | 568 |
| 2014 | 600 | 667 |
| 2015 | 580 | 615 |
| 2016 | 629 | 633 |
| 2017 | 586 | 635 |
| 2018 | 507 | 576 |
| 2019 | 551 | 586 |
| 2020 | 510 | 538 |
| 2021 | 393 | 452 |
| 2022 | 325 | 428 |
| 2023 | 291 | 434 |
| 2024 | 318 | 424 |
| 2025 | 288 | 386 |
| 2026 | 177 | 196 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate6 Oct 2026US 12,757,645 B2Robert Bosch GmbH
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of selectively forming crystalline boron-doped silicon germanium on a surface6 Oct 2026US 12,757,647 B2ASM IP Holding B. V.
- Method of increasing sensitivity and limits of detection and controlling fluid flow over sensor and sensor array6 Oct 2026US 12,757,650 B2The United States of America as represented by the Secretary of the Air Force
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
- Semiconductor device structure and manufacturing method thereof8 Oct 2026US 2026/0314277 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Reduction of interface resistance between silicon nanosheets and highly doped source/drain regions in nanosheet devices1 Oct 2026US 2026/0304810 A1ASM IP Holding B. V.
Most cited
By later US patents
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device3,939US 7,049,190 B2Sanyo Electric Co., Ltd. · 2006
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Method for manufacturing a semiconductor device1,352US 5,643,826 ASemiconductor Energy Laboratory Co.Ltd. · 1997