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US 12,753,529 B2Granted
Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer
AssigneeJX Advanced Metals Corporation
InventorsKodai Yamagishi, Shunsuke Oka, Kenji Suzuki
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Abstract
Provided is an indium phosphide substrate, a method for manufacturing indium phosphide substrate, and a semiconductor epitaxial wafer capable of suppressing an occurrence of contamination of the surface of the indium phosphide substrate caused by residues at the edge part. An indium phosphide substrate, wherein a surface roughness of an edge part of the substrate has a root mean square height Sq of 0.15 μm or less, as measured by a laser microscopy on the entire surface of the edge part.
Claims5
An indium phosphide substrate,
- wherein an edge part of the substrate has
- a surface sloping from one surface of the edge part;
- and
- a surface with curvature from a point where the sloping surface ends from one surface of the edge part to a point where the sloping surface ends from a different surface of the edge part;
- and
- a root mean square height Sq of the surface sloping from one surface of the edge part, as measured by laser microscopy, is 0.15 μm or less;
- and
- a root mean square height Sq of the surface with curvature, as measured by laser microscopy, is 0.15 μm or less,
- and wherein the surface sloping from one surface of the edge part and the surface with curvature are both present on the edge part of the substrate.
6 more elements
A method for manufacturing an indium phosphide substrate, comprising
- a process of chamfering an outer edge part of an indium phosphide wafer so that an edge part of the substrate has
- a surface sloping from one surface of the edge part;
- and
- a surface with curvature from a point where the sloping surface ends from one surface of the edge part to a point where the sloping surface ends from a different surface of the edge part,
- wherein the surface sloping from one surface of the edge part and the surface with curvature are both present on the edge part of the substrate,
- a process of polishing the entire surface of the edge part of the indium phosphide wafer after the chamfering with a #4000 grade polishing film, and
- a process of etching the indium phosphide wafer after polishing the edge part of the indium phosphide wafer.
4 more elements
Dependencies are inferred from the claim text.