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US 12,757,647 B2Granted
Method of selectively forming crystalline boron-doped silicon germanium on a surface
AssigneeASM IP Holding B.V.
InventorRami Khazaka
Life of this patent
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Abstract
Methods and systems for selectively forming crystalline boron-doped silicon germanium on a surface of a substrate. The methods can be used to selectively form the boron-doped silicon germanium within a gap from the bottom upward. Exemplary methods can be used to, for example, form source and/or drain regions in field effect transistor devices, such as in gate-all-around field effect transistor devices.
Claims21
A method of selectively forming crystalline boron-doped silicon germanium on a surface of a substrate, the method comprising the steps of:
- providing a substrate within a reaction chamber, the substrate comprising a first surface comprising a first crystallographic orientation, wherein the first surface consists of a Si{100} facet, and a second surface comprising a second crystallographic orientation, wherein the second surface comprises one or more of non-Si{100} crystal facets and a higher order silicon crystal facet that is perpendicularly oriented to a Si{100} crystal facet, the first surface and the second surface comprising the same material, wherein the material is a monocrystalline semiconductor material;
- and
- performing a cyclical deposition process to selectively form boron-doped silicon germanium epitaxial material overlying the first surface, relative to the second surface, the cyclical deposition process comprising one or more deposition cycles, each deposition cycle comprising:
- selectively forming boron-doped epitaxial silicon germanium overlying the first surface;
- forming boron-doped non-epitaxial silicon germanium overlying the second surface;
- and
- etching boron-doped non-epitaxial silicon germanium overlying the second surface.
4 more elements
Dependencies are inferred from the claim text.