H10P 14/2901
Materials
Official title: {Materials}
H10P14/2901 (Materials) appears on 11,772 US grants and 12,144 published applications in this corpus.
Search patents in H10P- Granted patents
- 11,772
- Published applications
- 12,144
- Assignees
- 2,245
- Inventors
- 16,666
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 42 | 0 |
| 1977 | 32 | 0 |
| 1978 | 38 | 0 |
| 1979 | 39 | 0 |
| 1980 | 34 | 0 |
| 1981 | 27 | 0 |
| 1982 | 28 | 0 |
| 1983 | 35 | 0 |
| 1984 | 49 | 0 |
| 1985 | 69 | 0 |
| 1986 | 67 | 0 |
| 1987 | 83 | 0 |
| 1988 | 71 | 0 |
| 1989 | 115 | 0 |
| 1990 | 76 | 0 |
| 1991 | 96 | 0 |
| 1992 | 100 | 0 |
| 1993 | 130 | 0 |
| 1994 | 131 | 0 |
| 1995 | 116 | 0 |
| 1996 | 102 | 0 |
| 1997 | 99 | 0 |
| 1998 | 146 | 0 |
| 1999 | 185 | 0 |
| 2000 | 164 | 0 |
| 2001 | 216 | 109 |
| 2002 | 262 | 379 |
| 2003 | 275 | 457 |
| 2004 | 301 | 391 |
| 2005 | 277 | 479 |
| 2006 | 320 | 522 |
| 2007 | 291 | 494 |
| 2008 | 300 | 443 |
| 2009 | 348 | 428 |
| 2010 | 390 | 567 |
| 2011 | 420 | 611 |
| 2012 | 420 | 626 |
| 2013 | 466 | 548 |
| 2014 | 583 | 645 |
| 2015 | 556 | 584 |
| 2016 | 597 | 600 |
| 2017 | 552 | 601 |
| 2018 | 481 | 543 |
| 2019 | 514 | 549 |
| 2020 | 480 | 499 |
| 2021 | 358 | 426 |
| 2022 | 302 | 397 |
| 2023 | 270 | 403 |
| 2024 | 294 | 361 |
| 2025 | 265 | 312 |
| 2026 | 160 | 170 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
- H10P 14/2902Being group iva materials5,972
- H10P 14/2921Being crystalline insulating materials2,425
- H10P 14/2922Being non-crystalline insulating materials2,272
- H10P 14/2907Being group iiia-va materials1,932
- H10P 14/2923Being conductive materials539
- H10P 14/2913Being group iib-via materials227
- H10P 14/2918Being semiconductor metal oxides157
- H10P 14/2919Being chalcogenide semiconducting materials not being oxides45
Recent patents
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Method for manufacturing a silicon carbide semiconductor component including a monocrystalline silicon carbide substrate and a polycrystalline silicon carbide substrate6 Oct 2026US 12,757,645 B2Robert Bosch GmbH
- Composition and method for making picocrystalline artificial borane atoms6 Oct 2026US 12,757,646 B2SemiNuclear, Inc.
- Method of increasing sensitivity and limits of detection and controlling fluid flow over sensor and sensor array6 Oct 2026US 12,757,650 B2The United States of America as represented by the Secretary of the Air Force
- Composite substrate, manufacturing method thereof, and semiconductor device6 Oct 2026US 12,757,772 B2Enkris Semiconductor, Inc.
- Semiconductor structure and method of manufacture8 Oct 2026US 2026/0313943 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Silicon carbide substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device8 Oct 2026US 2026/0313998 A1Sumitomo Electric Industries, Ltd.
- Semiconductor device structure and manufacturing method thereof8 Oct 2026US 2026/0314277 A1Taiwan Semiconductor Manufacturing Company.Ltd
- High Purity SiOC and SiC, Methods Compositions and Applications1 Oct 2026US 2026/0296898 A1Pallidus, Inc.
- Reduction of interface resistance between silicon nanosheets and highly doped source/drain regions in nanosheet devices1 Oct 2026US 2026/0304810 A1ASM IP Holding B. V.
Most cited
By later US patents
- LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film3,969US 7,323,356 B2Japan Science and Technology Agency · 2008
- Field-effect transistor and method for manufacturing the same3,966US 7,411,209 B2Canon Kabushiki Kaisha · 2008
- Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device3,939US 7,049,190 B2Sanyo Electric Co., Ltd. · 2006
- Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device3,918US 7,501,293 B2Murata Manufacturing Co., Ltd. · 2009
- Method for manufacturing a semiconductor device1,352US 5,643,826 ASemiconductor Energy Laboratory Co.Ltd. · 1997