H10P 14/2907
Being group iiia-va materials
Official title: {being Group IIIA-VA materials}
H10P14/2907 (Being group iiia-va materials) appears on 1,932 US grants and 1,701 published applications in this corpus.
Search patents in H10P- Granted patents
- 1,932
- Published applications
- 1,701
- Assignees
- 619
- Inventors
- 3,378
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 23 | 0 |
| 1977 | 17 | 0 |
| 1978 | 16 | 0 |
| 1979 | 14 | 0 |
| 1980 | 14 | 0 |
| 1981 | 14 | 0 |
| 1982 | 7 | 0 |
| 1983 | 12 | 0 |
| 1984 | 9 | 0 |
| 1985 | 14 | 0 |
| 1986 | 13 | 0 |
| 1987 | 16 | 0 |
| 1988 | 16 | 0 |
| 1989 | 34 | 0 |
| 1990 | 21 | 0 |
| 1991 | 28 | 0 |
| 1992 | 32 | 0 |
| 1993 | 40 | 0 |
| 1994 | 43 | 0 |
| 1995 | 36 | 0 |
| 1996 | 21 | 0 |
| 1997 | 31 | 0 |
| 1998 | 33 | 0 |
| 1999 | 32 | 0 |
| 2000 | 21 | 0 |
| 2001 | 27 | 18 |
| 2002 | 37 | 50 |
| 2003 | 33 | 41 |
| 2004 | 34 | 40 |
| 2005 | 29 | 59 |
| 2006 | 35 | 59 |
| 2007 | 25 | 63 |
| 2008 | 41 | 61 |
| 2009 | 34 | 70 |
| 2010 | 54 | 89 |
| 2011 | 72 | 108 |
| 2012 | 75 | 75 |
| 2013 | 53 | 72 |
| 2014 | 82 | 86 |
| 2015 | 70 | 84 |
| 2016 | 77 | 63 |
| 2017 | 81 | 70 |
| 2018 | 65 | 85 |
| 2019 | 76 | 86 |
| 2020 | 82 | 86 |
| 2021 | 60 | 85 |
| 2022 | 46 | 70 |
| 2023 | 60 | 69 |
| 2024 | 57 | 60 |
| 2025 | 44 | 31 |
| 2026 | 26 | 21 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Chip including silicon device and III-V semiconductor device on III-V semiconductor layer8 Sep 2026US 12,733,262 B2GLOBALFOUNDRIES U. S. Inc.
- Epitaxies of a chemical compound semiconductor25 Aug 2026US 12,721,055 B2National Chiao Tung University
- Group-III element nitride semiconductor substrate25 Aug 2026US 12,721,056 B2NGK Insulators, Ltd.
- Semiconductor device structure and manufacturing method thereof4 Aug 2026US 12,701,932 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Semiconductor device structure and manufacturing method thereof8 Oct 2026US 2026/0314277 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Group iii nitride semiconductor epitaxial wafer and electronic device1 Oct 2026US 2026/0304875 A1Panasonic Holdings Corporation
- High quality group-iii metal nitride crystals, methods of making, and methods of use20 Aug 2026US 2026/0247878 A1KYOCERA Corporation
- Gallium arsenide single crystal substrate and method of producing same30 Jul 2026US 2026/0218416 A1Sumitomo Electric Industries, Ltd.
- Uniform And Controllable Silicone Doping Of Aluminum Nitride30 Jul 2026US 2026/0218418 A1The Regents of the University of Michigan
Most cited
By later US patents
- Method of fabricating epitaxial structures827US 8,455,290 B2Masimo Semiconductor, Inc. · 2013
- Reduction of dislocations in a heteroepitaxial semiconductor structure513US 6,010,937 ASpire Corporation · 2000
- Compound semi-conductors and controlled doping thereof493US 5,709,745 AOhio Aerospace Institute · 1998
- Sulfur-containing thin films479US 9,245,742 B2ASM IP Holding B. V. · 2016
- Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)274US 7,338,828 B2Japan Science and Technology Agency · 2008