US 2026/0218418 A1 · Uniform And Controllable Silicone Doping Of Aluminum Nitride

Abstract

Controllable Si doping in N-polar aluminum nitride (AlN) films grown on single crystal AlN substrate is achieved by plasma assisted molecular beam epitaxy (PAMBE). Through optimization of growth condition, high quality N polar AlN films were obtained at 950° C. However, further studies revealed that silicon incorporation dramatically decreases at such high growth temperature. To enable higher silicon incorporation, a hybrid low temperature and high temperature growth condition was developed by using gallium as surfactant at low temperature growth. By lowering the growth temperature of AlN to 750° C., silicon was incorporated with concentrations as high as 2×1020 cm−3 and demonstrated an electron concentration as high as 1×1019 cm−3 at room temperature.

Claims20

Dependent claims

A method for fabricating a semiconductor device, comprising:

providing a substrate;
depositing a first layer of aluminum nitride on a surface of the substrate at a first temperature, where the first temperature is greater than 900 degrees Celsius;
and
depositing a second layer of aluminum nitride on top of the first layer using a surfactant and at a second temperature while concurrently doping the second layer with silicon, where the second temperature is less than 800 degrees Celsius.

1 more element

Dependencies are inferred from the claim text.

Uniform And Controllable Silicone Doping Of Aluminum Nitride

Life of this patent

Uniform And Controllable Silicone Doping Of Aluminum Nitride

Life of this patent

Abstract

Claims20