Epitaxies of a chemical compound semiconductor
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Chiao Tung University
InventorsHung-Wei Yu, Yi Chang, Tsun-Ming Wang
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Abstract
Methods and structures includes providing a substrate, forming a prelayer over a substrate, forming a barrier layer over the prelayer, and forming a channel layer over the barrier layer. Forming the prelayer may include growing the prelayer at a graded temperature. Forming the barrier layer is such that the barrier layer may include GaAs or InGaAs. Forming the channel layer is such that the channel layer may include InAs or an Sb-based heterostructure. Thereby structures are formed.
Claims20
A structure comprising:
- a barrier layer comprising InxGa1-xAs;
- wherein the barrier layer is between a substrate and a non-InxGa1-xAs channel layer, is doped, and a concentration of dopant in the barrier layer is in an order of 1017 cm−3.
A structure comprising:
- a barrier layer including InxGa1-xAs;
- and
- a non-InxGa1-xAs channel layer;
- wherein the barrier layer is between a substrate and the channel layer, is doped, and a concentration of dopant in the barrier layer is in an order of 1017 cm−3.
A structure comprising:
- a barrier layer including InxGa1-xAs;
- and
- a non-InxGa1-xAs channel layer including a heterostructure comprising InAs;
- wherein the barrier layer is between a substrate and the channel layer, is doped, and a concentration of dopant in the barrier layer is in an order of 1017 cm−3.
Dependencies are inferred from the claim text.