H10P 14/2909
Phosphides
Official title: {Phosphides}
H10P14/2909 (Phosphides) appears on 351 US grants and 222 published applications in this corpus.
Search patents in H10P- Granted patents
- 351
- Published applications
- 222
- Assignees
- 160
- Inventors
- 768
- Latest grant
- 6 Oct 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 10 | 0 |
| 1977 | 9 | 0 |
| 1978 | 1 | 0 |
| 1979 | 4 | 0 |
| 1980 | 2 | 0 |
| 1981 | 5 | 0 |
| 1982 | 5 | 0 |
| 1983 | 2 | 0 |
| 1984 | 3 | 0 |
| 1985 | 7 | 0 |
| 1986 | 4 | 0 |
| 1987 | 3 | 0 |
| 1988 | 7 | 0 |
| 1989 | 9 | 0 |
| 1990 | 7 | 0 |
| 1991 | 12 | 0 |
| 1992 | 7 | 0 |
| 1993 | 15 | 0 |
| 1994 | 10 | 0 |
| 1995 | 12 | 0 |
| 1996 | 5 | 0 |
| 1997 | 6 | 0 |
| 1998 | 9 | 0 |
| 1999 | 11 | 0 |
| 2000 | 7 | 0 |
| 2001 | 6 | 6 |
| 2002 | 4 | 10 |
| 2003 | 6 | 9 |
| 2004 | 8 | 4 |
| 2005 | 6 | 8 |
| 2006 | 5 | 13 |
| 2007 | 3 | 14 |
| 2008 | 8 | 11 |
| 2009 | 4 | 8 |
| 2010 | 3 | 8 |
| 2011 | 10 | 9 |
| 2012 | 9 | 9 |
| 2013 | 4 | 7 |
| 2014 | 10 | 10 |
| 2015 | 8 | 5 |
| 2016 | 11 | 7 |
| 2017 | 8 | 8 |
| 2018 | 6 | 10 |
| 2019 | 8 | 8 |
| 2020 | 8 | 11 |
| 2021 | 5 | 13 |
| 2022 | 8 | 9 |
| 2023 | 15 | 16 |
| 2024 | 10 | 7 |
| 2025 | 2 | 0 |
| 2026 | 4 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Indium phosphide substrate, method for manufacturing indium phosphide substrate, and semiconductor epitaxial wafer6 Oct 2026US 12,753,529 B2JX Advanced Metals Corporation
- Multi-regional epitaxial growth and related systems and articles16 Jun 2026US 12,660,519 B2Massachusetts Institute of Technology
- Architecture for InGaAs/GaAsSb superlattices on an InP substrate26 May 2026US 12,641,911 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Semiconductor component having defect barrier region20 Jan 2026US 12,532,567 B2Visual Photonics Epitaxy Co., Ltd.
- Semiconductor device with selective area epitaxy growth utilizing a mask to suppress or enhance growth at the edges11 Nov 2025US 12,470,045 B2Ciena Corporation
- Method for manufacturing semiconductor device14 May 2026US 2026/0136847 A1Hamamatsu Photonics K.K.
- Semiconductor Device With Selective Area Epitaxy Growth Utilizing a Mask to Suppress or Enhance Growth at the Edges5 Feb 2026US 2026/0039091 A1Ciena Corporation
- Iii-v, ii-vi in-situ compliant substrate formation8 Aug 2024US 2024/0266165 A1The Regents of the University of California
- High thermal conductivity boron arsenide for thermal management, electronics, optoelectronics, and photonics applications18 Jul 2024US 2024/0243034 A1The Regents of the University of California
- Sag nanowire growth with a planarization process23 May 2024US 2024/0170286 A1Microsoft Technology Licensing, LLC
Most cited
By later US patents
- Atomic layer epitaxy of compound semiconductor166US 5,270,247 AFujitsu Limited · 1993
- Method and apparatus for depositing a material on a surface111US 4,340,617 AMassachusetts Institute of Technology · 1982
- Group III-V compound semiconductor crystal structure and method of epitaxial growth of the same as well as semiconductor device including the same102US 6,809,351 B2NEC Corporation · 2004
- Method of making semiconductor device by selective epitaxial growth89US 5,438,018 AFujitsu Limited · 1995
- Group VI doping of III-V semiconductors during ALE88US 4,859,627 ANEC Corporation · 1989