Semiconductor device with selective area epitaxy growth utilizing a mask to suppress or enhance growth at the edges

A method comprising:

• with a semiconductor wafer having an orientation in a plane, depositing a mask to the semiconductor wafer, wherein the mask is configured to cover a portion of the semiconductor wafer, and wherein the mask includes a perimeter having multiple sides such that most of the perimeter of the mask is substantially aligned along a preferred crystal direction relative to the orientation selected from approximately 34, 56, 124, 146, 214, 236, 304, or 326 degrees relative to a [011] crystallographic axis of the semiconductor wafer to specifically reduce growth enhancement at edges of the substantially aligned sides, wherein the preferred crystal direction is determined by forming circular mask islands at varying angular orientations relative to the [011] direction, measuring island heights and volumes resulting from Selective Area Epitaxy (SAE) growth, and correlating measured island heights and volumes to the angular orientations to identify angles providing reduced growth enhancement;
• and
• performing Selective Area Epitaxy (SAE) growth on a surface of the semiconductor wafer.