Method and apparatus for depositing a material on a surface
AssigneeMassachusetts Institute of Technology
InventorsThomas F. Deutsch, Daniel J. Ehrlich, Richard M. Osgood
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AssigneeMassachusetts Institute of Technology
InventorsThomas F. Deutsch, Daniel J. Ehrlich, Richard M. Osgood
Estimating the term…
An apparatus and method for depositing a layer of a surface-compatible material from the fluid phase onto a selected surface of a substrate body in a fluid deposition chamber features a laser source of optically focused energy directed toward the body surface in a selected pattern. The energy is focused at a position adjacent the selected surface. Apparatus is provided for introducing a fluid medium adjacent the surface of the body. The medium has at least one component which absorbs a portion of the incident laser energy at the selected frequency for effecting photodecomposition or photolysis of the component in the fluid phase. Thereby, the product(s) of the photolysis process are deposited in the selected pattern on the substrate surface. The pattern may be fixed in position or may be optically or mechanically scanned across the substrate body. Thereby, metal layers, metal interconnects, pn junction and ohmic contact forming layers, selectively doped regions, etc. can be accurately deposited on the substrate surface, and in particular semiconductor substrate surfaces without the use of masks.
Apparatus for depositing from a fluid phase, a layer of a surface compatible material onto a selected surface of a substrate body comprising
Apparatus for depositing from the gaseous phase a layer of a surface-compatible material onto a selected surface of a body comprising
Apparatus for forming a selectively doped region by depositing a selected material from the gaseous phase onto a surface of a semiconductor substrate body comprising
Apparatus for repairing a surface discontinuity in a surface layer of a body by depositing a selected material from the gaseous phase onto said body surface layer at said discontinuity comprising
Apparatus for producing a pn junction in a surface layer of a doped semiconductor substrate comprising
Apparatus for depositing from the gaseous phase a layer of a material onto a selected surface of a body in a predetermined spatially disjoint pattern comprising
Apparatus for depositing, from a gaseous phase, a layer of a compound onto a selected surface of a body comprising
A method for selectively depositing a surface-compatible film on a surface of a substrate body comprising the steps of
A method for selectively depositing a surface-compatible film on a surface of a substrate body comprising the steps of
A method for selectively depositing a surface-compatible film on a surface of a substrate body comprising the steps of
A method for selectively depositing a surface-compatible film on a surface of a substrate body comprising the steps of
A method for forming a selectively doped region by depositing a selected material from a gaseous phase onto a surface of a substrate body comprising the steps of
A method for repairing a surface discontinuity on a surface of a body by depositing a selected material from the gaseous phase onto the body surface at said discontinuity in a selected pattern comprising the steps of
A method for producing a pn junction in a surface layer of a doped semiconductor substrate comprising the steps of
A method for selectively depositing a surface-compatible film in a selected spatially disjoint pattern on a substrate surface comprising the steps of
A method for selectively depositing a film on a surface of a substrate body, said film being composed of two components, comprising the steps of
A method for selectively depositing a surface-compatible film on a surface of a substrate body comprising the steps of
Dependencies are inferred from the claim text.