Method for manufacturing semiconductor device
AssigneeHamamatsu Photonics K.K.
InventorsTakashi SENGA, Ryuji OKUMURA
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Abstract
A method for manufacturing a semiconductor device comprising a first semiconductor made of InP or InGaAsP and a second semiconductor provided on the first semiconductor, the method comprising: performing thermal cleaning on a surface of the first semiconductor in a growth furnace in an atmosphere containing arsine; and growing the second semiconductor on the surface of the first semiconductor in the growth furnace. A set temperature of the growth furnace during the thermal cleaning is lower than a set temperature of the growth furnace during the growing of the second semiconductor.
Claims11
A method for manufacturing a semiconductor device comprising a first semiconductor made of InP or InGaAsP and a second semiconductor provided on the first semiconductor, the method comprising:
- performing thermal cleaning on a surface of the first semiconductor in a growth furnace in an atmosphere containing arsine;
- and
- growing the second semiconductor on the surface of the first semiconductor in the growth furnace,
- wherein a set temperature of the growth furnace during the thermal cleaning is lower than a set temperature of the growth furnace during the growing the second semiconductor.
Dependencies are inferred from the claim text.