Iii-v, ii-vi in-situ compliant substrate formation

A device, comprising:

• a III-V or II-VI compound based device having an in-plane lattice constant or strain that is at least 20% biaxially relaxed including:
• a III-V or II-VI compound based decomposition stop layer created on or above a III-V or II-VI compound based decomposition layer, wherein the III-V or II-VI compound based decomposition stop layer has a higher sublimation temperature or melting point as compared to a lower sublimation temperature or melting point of the III-V or II-VI compound based decomposition layer, wherein the III-V or II-VI compound based decomposition layer is decomposed, but not the III-V or II-VI compound based decomposition stop layer;
• and
• a III-V or II-VI compound based device structure grown on or above the ITT-V or IT-VI compound based decomposition stop layer.

A product-by-process, comprising:

• a III-V or II-VI compound based device having an in-plane lattice constant or strain that is at least 20% biaxially relaxed including:
• a III-V or II-VI compound based decomposition stop layer created on or above a III-V or II-VI compound based decomposition layer, wherein the III-V or II-VI compound based decomposition stop layer has a higher sublimation temperature or melting point as compared to a lower sublimation temperature or melting point of the III-V or II-VI compound based decomposition layer, wherein the III-V or II-VI compound based decomposition layer is decomposed, but not the III-V or II-VI compound based decomposition stop layer;
• and
• a III-V or II-VI compound based device structure grown on or above the III-V or II-VI compound based decomposition stop layer;
• wherein the III-V or II-VI compound based device having the in-plane lattice constant or strain that is at least 20% biaxially relaxed is fabricated by:
• creating the III-V or II-VI compound based decomposition stop layer on or above the III-V or II-VI compound based decomposition layer, wherein the III-V or II-VI compound based decomposition stop layer has a higher sublimation temperature or melting point as compared to a lower sublimation temperature or melting point of the III-V or II-VI compound based decomposition layer, and a temperature increase decomposes the III-V or II-VI compound based decomposition layer;
• and
• growing the III-V or II-VI compound based device structure on or above the ITT-V or IT-VI compound based decomposition stop layer.