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US 12,660,519 B2Granted
Multi-regional epitaxial growth and related systems and articles
AssigneeMassachusetts Institute of Technology
InventorsJeehwan Kim, Yunjo Kim, Sanghoon Bae
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Abstract
Epitaxial growth of materials, and related systems and articles, are generally described.
Claims28
A method, comprising:
- growing a first single-crystalline material over a stack comprising a two-dimensional (2D) material, a first single-crystalline underlayer below the 2D material, a first etch stop layer below the first single-crystalline underlayer, and a second single-crystalline underlayer below the first etch stop layer, such that the first single-crystalline material is substantially epitaxially matched to the first single-crystalline underlayer below the 2D material and/or epitaxially matched to the 2D material, wherein the first single-crystalline material is in direct contact with the 2D material and the 2D material is in direct contact with the first single-crystalline underlayer, and wherein the 2D material comprises graphene, a transition metal dichalcogenide, or boron nitride;
- separating the first single-crystalline material from at least the first single-crystalline underlayer, the first etch stop layer, and the second single-crystalline underlayer;
- removing at least a portion of the first single-crystalline underlayer and exposing at least a portion of a surface of the first etch stop layer;
- removing at least a portion of the first etch stop layer and exposing at least a portion of a surface of the second single-crystalline underlayer and/or at least a portion of a surface of an optional second 2D material;
- and
- growing a second single-crystalline material over the second single-crystalline underlayer.
3 more elements
A method comprising:
- depositing a first single-crystalline etch stop layer onto a single-crystalline substrate;
- depositing a first single-crystalline base layer over the first single-crystalline etch stop layer;
- depositing a 2D material onto the first single-crystalline base layer, wherein the 2D material is an atomically thin material;
- depositing a second single-crystalline etch stop layer over the first single-crystalline base layer;
- and
- depositing a second single-crystalline base layer over the second single-crystalline etch stop layer.
3 more elements
Dependencies are inferred from the claim text.