Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD)
AssigneesThe Regents of the University of California, Japan Science and Technology Agency
InventorsBilge M. Imer, James S. Speck, Steven P. DenBaars, Shuji Nakamura
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Abstract
A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AlN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.
Claims11
A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:
- (a) growing non-polar m-{1-100} plane III-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD).
A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:
- (a) growing non-polar m-plane III-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD), comprising:
- (1) performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface;
- (2) annealing the substrate after performing the solvent clean and acid dip;
- (3) growing a nucleation layer on the substrate after the annealing step;
- and
- (4) growing a planar epitaxial layer of the non point m-plane III-Nitride on the nucleation layer.
Dependencies are inferred from the claim text.