Group iii nitride semiconductor epitaxial wafer and electronic device
AssigneePanasonic Holdings Corporation
InventorsTomoaki SUMI, Takashi KANO
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Abstract
A Group III nitride semiconductor epitaxial wafer includes: a Group III nitride semiconductor substrate exhibiting n-type conductivity and having a carrier concentration of 1020 cm−3 or more; a first Group III nitride semiconductor film epitaxially grown on the Group III nitride semiconductor substrate, the first Group III nitride semiconductor film containing Al and Ga as Group III elements; and a second Group III nitride semiconductor film epitaxially grown on the first Group III nitride semiconductor film.
Claims10
A Group III nitride semiconductor epitaxial wafer comprising:
- a Group III nitride semiconductor substrate exhibiting n-type conductivity and having a carrier concentration of 1020cm−3 or more;
- a first Group III nitride semiconductor film epitaxially grown on the Group III nitride semiconductor substrate, the first Group III nitride semiconductor film containing Al and Ga as Group III elements;
- and
- a second Group III nitride semiconductor film epitaxially grown on the first Group III nitride semiconductor film.
A method for producing a Group III nitride semiconductor epitaxial wafer, comprising:
- forming a Group III nitride semiconductor substrate exhibiting n-type conductivity and having a carrier concentration of 1020cm−3 or more by OVPE method;
- epitaxially growing a first Group III nitride semiconductor film containing Al and Ga as Group III elements on the Group III nitride semiconductor substrate;
- and
- epitaxially growing a second Group III nitride semiconductor film on the first Group III nitride semiconductor film.
Dependencies are inferred from the claim text.