H10P 14/2911
Arsenides
Official title: {Arsenides}
H10P14/2911 (Arsenides) appears on 842 US grants and 457 published applications in this corpus.
Search patents in H10P- Granted patents
- 842
- Published applications
- 457
- Assignees
- 316
- Inventors
- 1,603
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 17 | 0 |
| 1977 | 12 | 0 |
| 1978 | 16 | 0 |
| 1979 | 10 | 0 |
| 1980 | 13 | 0 |
| 1981 | 12 | 0 |
| 1982 | 5 | 0 |
| 1983 | 11 | 0 |
| 1984 | 6 | 0 |
| 1985 | 9 | 0 |
| 1986 | 9 | 0 |
| 1987 | 14 | 0 |
| 1988 | 12 | 0 |
| 1989 | 26 | 0 |
| 1990 | 17 | 0 |
| 1991 | 20 | 0 |
| 1992 | 26 | 0 |
| 1993 | 32 | 0 |
| 1994 | 37 | 0 |
| 1995 | 31 | 0 |
| 1996 | 18 | 0 |
| 1997 | 26 | 0 |
| 1998 | 29 | 0 |
| 1999 | 26 | 0 |
| 2000 | 13 | 0 |
| 2001 | 20 | 9 |
| 2002 | 21 | 24 |
| 2003 | 23 | 24 |
| 2004 | 19 | 26 |
| 2005 | 14 | 29 |
| 2006 | 23 | 23 |
| 2007 | 15 | 26 |
| 2008 | 18 | 17 |
| 2009 | 15 | 24 |
| 2010 | 16 | 15 |
| 2011 | 21 | 26 |
| 2012 | 19 | 16 |
| 2013 | 9 | 12 |
| 2014 | 9 | 8 |
| 2015 | 10 | 20 |
| 2016 | 13 | 7 |
| 2017 | 18 | 20 |
| 2018 | 14 | 17 |
| 2019 | 16 | 17 |
| 2020 | 16 | 17 |
| 2021 | 14 | 23 |
| 2022 | 14 | 18 |
| 2023 | 14 | 19 |
| 2024 | 13 | 14 |
| 2025 | 8 | 4 |
| 2026 | 3 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Epitaxies of a chemical compound semiconductor25 Aug 2026US 12,721,055 B2National Chiao Tung University
- Growth of semiconductor materials by hydride vapor phase epitaxy using an external aluminum chloride generator3 Feb 2026US 12,540,417 B2Alliance for Energy Innovation, LLC
- Semiconductor component having defect barrier region20 Jan 2026US 12,532,567 B2Visual Photonics Epitaxy Co., Ltd.
- Method and system for vertical gradient freeze 8 inch gallium arsenide substrates26 Aug 2025US 12,398,486 B2AXT, Inc.
- Semiconductor device and method for forming the same15 Jul 2025US 12,363,981 B2National Taiwan University
- Gallium arsenide single crystal substrate and method of producing same16 Apr 2026US 2026/0103823 A1Sumitomo Electric Industries, Ltd.
- Method for reuse of gaas substrate employed for epitaxial cigs solar cell29 Jan 2026US 2026/0033034 A1Korea Institute of Energy Technology
- Method for forming an epitaxial structure20 Nov 2025US 2025/0359395 A1PlayNitride Display Co., Ltd.
- Semiconductor device and method for forming the same23 Oct 2025US 2025/0331273 A1National Taiwan University
- Optoelectronic semiconductor device and manufacturing method2 Oct 2025US 2025/0311488 A1ams-OSRAM International GmbH
Most cited
By later US patents
- Method of fabricating epitaxial structures827US 8,455,290 B2Masimo Semiconductor, Inc. · 2013
- Reduction of dislocations in a heteroepitaxial semiconductor structure513US 6,010,937 ASpire Corporation · 2000
- Compound semi-conductors and controlled doping thereof493US 5,709,745 AOhio Aerospace Institute · 1998
- Sulfur-containing thin films479US 9,245,742 B2ASM IP Holding B. V. · 2016
- Semiconductor device using whiskers265US 5,362,972 AHitachi, Ltd. · 1994