Semiconductor device and method for forming the same
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsShih-Yen Lin, Po-Cheng Tsai
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Abstract
A method includes forming a gate dielectric layer over a gate electrode layer; forming a 2-D material layer over the gate dielectric layer; forming source/drain contacts over source/drain regions of the 2-D material layer, in which each of the source/drain contacts includes an antimonene layer and a metal layer over the antimonene layer; and after forming the source/drain contacts, removing a first portion of the 2-D material layer exposed by the source/drain contacts, while leaving a second portion of the 2-D material layer remaining over the gate dielectric layer as a channel region.
Claims20
A method, comprising:
- forming a gate dielectric layer over a gate electrode layer;
- forming a 2-D material layer over the gate dielectric layer;
- forming source/drain contacts over source/drain regions of the 2-D material layer, wherein each of the source/drain contacts comprises an antimonene layer and a metal layer over the antimonene layer, wherein the antimonene layer has a polycrystalline structure;
- and
- after forming the source/drain contacts, removing a first portion of the 2-D material layer exposed by the source/drain contacts, while leaving a second portion of the 2-D material layer remaining over the gate dielectric layer as a channel region.
A method, comprising:
- depositing a molybdenum disulfide (MoS2) layer over a substrate, wherein depositing the MoS2 layer comprises:
- supplying a first precursor of molybdenum hexacarbonyl (Mo(Co)6) and a second precursor of ozone (O3) over the substrate to deposit a MoO3 film over the substrate;
- and
- performing a sulfurization process to the MoO3 film to convert the MoO3 film into a MoS2 film;
- transferring the MoS2 layer from the substrate to a top surface of a gate dielectric layer over a gate electrode layer;
- forming source/drain contacts over source/drain regions of the MoS2 layer, wherein each of the source/drain contacts comprises a first metal layer and a second metal layer over the first metal layer, and wherein forming the source/drain contacts comprises:
- forming a patterned mask over the MoS2 layer, wherein the patterned mask comprises openings exposing the source/drain regions of the MoS2 layer;
- depositing a material of the first metal layer in the openings under a temperature in a range from 70° C. to about 80° C.;
- depositing a material of the second metal layer in the openings;
- and
- removing the patterned mask;
- and
- after forming the source/drain contacts, removing a first portion of the MoS2 layer exposed by the source/drain contacts, while leaving a second portion of the MoS2 layer remaining over the gate dielectric layer as a channel region.
A method, comprising:
- forming a 2-D material layer over a top surface of a gate structure;
- forming source/drain contacts on source/drain regions of the 2-D material layer, respectively, wherein each of the source/drain contacts comprises an antimonene layer and a metal layer over the antimonene layer, wherein the antimonene layer has a polycrystalline structure;
- and
- patterning a portion of the 2-D material layer laterally between the source/drain regions of the 2-D material layer to form a channel region of the 2-D material layer.
Dependencies are inferred from the claim text.