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US 12,540,417 B2Granted
Growth of semiconductor materials by hydride vapor phase epitaxy using an external aluminum chloride generator
AssigneeAlliance for Energy Innovation, LLC
InventorsWondwosen Tilahun Metaferia, Kevin Louis Schulte, Aaron Joseph Ptak, John David Simon
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Abstract
Disclosed herein is the controlled epitaxy of AlxGa1-xAs, AlxIn1-xP, and AlxGayIn1-x-yP by hydride vapor phase epitaxy (HVPE) through use of an external AlCl3 generator.
Claims11
A method for the deposition of Al-containing III-V materials by hydride vapor phase epitaxy (HVPE) through use of an external AlCl3 generator;
- wherein the AlCl3 molecules do not decompose during the deposition process.
An optoelectronic device made by using a method for the deposition of Al-containing III-V materials by HVPE through use of an external AlCl3 generator;
- wherein the AlCl3 molecules do not decompose during the deposition process.
Dependencies are inferred from the claim text.