Back to results
US 2026/0033034 A1Published application
METHOD FOR REUSE OF GaAs SUBSTRATE EMPLOYED FOR EPITAXIAL CIGS SOLAR CELL
AssigneeKorea Institute of Energy Technology
InventorsJae Ho YUN, Jae Chang YANG
Life of this patent
Estimating the term…
Abstract
An exemplary embodiment of the present disclosure is directed to providing a method of recycling GaAs substrates in epitaxial single crystalline CIGS (copper indium gallium selenide) solar cells. The method allows expensive single crystalline GaAs substrates to be recycled in implementing epitaxial single crystalline CIGS solar cells, and thus it is possible to reduce processing costs when commercializing solar cells.
Claims15
A method of recycling GaAs substrates, comprising the steps of:
- forming an epitaxial CIGS (copper indium gallium selenide) light-absorbing layer on the top of a GaAs wafer;
- attaching a heat resistant structure to the edge of the top surface of the light-absorbing layer;
- forming an electrode layer on the top of the light-absorbing layer;
- attaching a carrier wafer to the top of the electrode layer;
- and
- separating the GaAs wafer through an epitaxial lift off process.
3 more elements
A method of recycling GaAs substrates, comprising the steps of:
- forming an epitaxial CIGS light-absorbing layer on the top of a GaAs wafer;
- attaching a carrier wafer to the top of the light-absorbing layer;
- separating the GaAs wafer through an epitaxial lift off process;
- attaching a metal electrode to the bottom of the light-absorbing layer;
- bonding copper foil having a metal thin film deposited thereon to the bottom of the metal electrode;
- separating the carrier wafer;
- and
- forming an electrode layer on the top of the light-absorbing layer.
5 more elements
Dependencies are inferred from the claim text.