H10P 14/2912
Antimonides
Official title: {Antimonides}
H10P14/2912 (Antimonides) appears on 59 US grants and 55 published applications in this corpus.
Search patents in H10P- Granted patents
- 59
- Published applications
- 55
- Assignees
- 36
- Inventors
- 128
- Latest grant
- 22 Apr 2025
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 2 | 0 |
| 1986 | 1 | 0 |
| 1987 | 1 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 1 | 0 |
| 1992 | 2 | 0 |
| 1993 | 0 | 0 |
| 1994 | 2 | 0 |
| 1995 | 2 | 0 |
| 1996 | 0 | 0 |
| 1997 | 1 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 0 |
| 2006 | 0 | 0 |
| 2007 | 1 | 2 |
| 2008 | 0 | 2 |
| 2009 | 1 | 2 |
| 2010 | 0 | 1 |
| 2011 | 2 | 2 |
| 2012 | 0 | 2 |
| 2013 | 2 | 3 |
| 2014 | 2 | 2 |
| 2015 | 2 | 2 |
| 2016 | 2 | 1 |
| 2017 | 2 | 3 |
| 2018 | 2 | 2 |
| 2019 | 1 | 3 |
| 2020 | 2 | 3 |
| 2021 | 3 | 7 |
| 2022 | 7 | 3 |
| 2023 | 9 | 12 |
| 2024 | 5 | 1 |
| 2025 | 1 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Sag nanowire growth with a planarization process22 Apr 2025US 12,283,483 B2Microsoft Technology Licensing, LLC
- Optimized heteroepitaxial growth of semiconductors3 Dec 2024US 12,157,956 B2The United States of America as represented by the Secretary of the Air Force
- Optimized heteroepitaxial growth of semiconductors15 Oct 2024US 12,116,695 B2The United States of America as represented by the Secretary of the Air Force
- Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment23 Jul 2024US 12,046,471 B1The United States of America as represented by the Secretary of the Air Force
- Semiconductor device including graphene and method of manufacturing the semiconductor device2 Jul 2024US 12,027,589 B2Samsung Electronics Co., Ltd.
- Method of fabricating a device having a passivating layer2 Jan 2025US 2025/0006486 A1Microsoft Technology Licensing, LLC
- Sag nanowire growth with a planarization process23 May 2024US 2024/0170286 A1Microsoft Technology Licensing, LLC
- Optimized Heteroepitaxial Growth of Semiconductors2 Nov 2023US 2023/0352302 A1Government of the United States as Represented by the Secretary of the Air Force
- Optimized Heteroepitaxial Growth of Semiconductors11 May 2023US 2023/0148397 A1Government of the United States as Represented by the Secretary of the Air Force
- Optimized thick heteroepitaxial growth of semiconductors with in-situ substrate pretreatment4 May 2023US 2023/0137113 A1Government of the United States as Represented by the Secretary of the Air Force
Most cited
By later US patents
- MBE Growth technique for matching superlattices grown on GaAs substrates35US 4,558,336 AThe United States of America as represented by the Secretary of the Army · 1985
- Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials28US 4,568,397 ARaytheon Company · 1986
- Tunnel diode25US 4,198,644 AThe United States of America as represented by the Secretary of the Army · 1980
- Ordered mixed crystal semiconductor superlattice device19US 5,436,468 AFujitsu Limited · 1995
- Semimetal-semiconductor heterostructures and multilayers16US 5,449,561 AUniversity of Houston · 1995