Optimized heteroepitaxial growth of semiconductors

A method of performing telluride heteroepitaxial growth, the method comprising:

• providing a reactor comprising an inner tube and an outer tube surrounding the inner tube, the inner tube comprising a boat comprising a Group II/III element, the outer tube comprising a substrate situated inside the outer tube and downstream of the inner tube;
• exposing the substrate to a carrier gas comprising H2 and a first precursor gas comprising HCl, wherein the carrier gas and the first precursor gas are delivered from inside the inner tube toward the substrate;
• delivering a first ternary-forming gas and a second ternary-forming gas through the outer tube, outside the inner tube, to form the heteroepitaxial growth, the second ternary-forming gas comprising H2Te;
• and
• exposing the substrate to the first and second ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio);
• and changing the 1tf:2tf ratio over time,
• wherein the Group II/III element is Zn, the substrate is InAs, the first ternary-forming gas is AsH3, and the heteroepitaxial growth is ZnTe.

A method of performing telluride heteroepitaxial growth, the method comprising:

• providing a reactor comprising an inner tube and an outer tube surrounding the inner tube, the inner tube comprising a boat comprising a Group II/III element, the outer tube comprising a substrate situated inside the outer tube and downstream of the inner tube;
• exposing the substrate to a carrier gas comprising H2 and a first precursor gas comprising HCl, wherein the carrier gas and the first precursor gas are delivered from inside the inner tube toward the substrate;
• delivering a first ternary-forming gas and a second ternary-forming gas through the outer tube, outside the inner tube, to form the heteroepitaxial growth, the second ternary-forming gas comprising H2Te;
• and
• exposing the substrate to the first and second ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio);
• and changing the 1tf:2tf ratio over time,
• wherein the Group II/III element is Ga, the substrate is InP, the first ternary-forming gas is PH3, and the heteroepitaxial growth is a cubic phase zinc blende gallium telluride Ga2Te3.

A method of performing telluride heteroepitaxial growth, the method comprising:

• providing a reactor comprising an inner tube and an outer tube surrounding the inner tube, the inner tube comprising a boat comprising a Group II/III element, the outer tube comprising a substrate situated inside the outer tube and downstream of the inner tube;
• exposing the substrate to a carrier gas comprising H2 and a first precursor gas comprising HCl, wherein the carrier gas and the first precursor gas are delivered from inside the inner tube toward the substrate;
• delivering a first ternary-forming gas and a second ternary-forming gas through the outer tube, outside the inner tube, to form the heteroepitaxial growth, the second ternary-forming gas comprising H2Te;
• and
• exposing the substrate to the first and second ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio);
• and changing the 1tf:2tf ratio over time,
• wherein the Group II/III element is Cd, the substrate is InSb, the first ternary-forming gas is SbH3, and the heteroepitaxial growth is CdTe.

A method of performing telluride heteroepitaxial growth, the method comprising:

• providing a reactor comprising an inner tube and an outer tube surrounding the inner tube, the inner tube comprising a boat comprising a Group II/III element, the outer tube comprising a substrate situated inside the outer tube and downstream of the inner tube;
• exposing the substrate to a carrier gas comprising H2 and a first precursor gas comprising HCl, wherein the carrier gas and the first precursor gas are delivered from inside the inner tube toward the substrate;
• delivering a first ternary-forming gas and a second ternary-forming gas through the outer tube, outside the inner tube, to form the heteroepitaxial growth, the second ternary-forming gas comprising H2Te;
• and
• exposing the substrate to the first and second ternary-forming gasses in a predetermined ratio of first ternary-forming gas to second ternary-forming gas (1tf:2tf ratio);
• and changing the 1tf:2tf ratio over time,
• wherein the Group II/III element is Hg, the substrate is InSb, the first ternary-forming gas is SbH3, and the heteroepitaxial growth is HgTe.