US 4,568,397 A · Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials

Abstract

A method for growing a Group II-VI epitaxial layer on a substrate, said epitaxial layer having an electron mobility greater than 1.5.times.10.sup.5 cm.sup.2 /V-sec at 77.degree. K. and a carrier concentration less than 4.times.10.sup.15 (cm.sup.-3) is described. The method includes the steps of directing a plurality of vapor flows towards the substrate including a Group II metalorganic vapor having a mole fraction in the range of 3.0.times.10.sup.-4 to 4.5.times.10.sup.-4, a Group VI metalorganic vapor having a mole fraction in the range of 2.9.times.10.sup.-3 to 3.5.times.10.sup.-3 and a Group II elemental metal vapor having a mole fraction in the range of 2.6.times.10.sup.-2 to 3.2.times.10.sup.-2. The source of Group II metal is heated to at least 240.degree. C. while radiant energy is directed toward the reactor vessel to warm the zone of the reactor vessel between the Group II metal source and the substrate to at least 240.degree. C. The directed flows of Group II metalorganic vapor, Group VI metalorganic vapor and Group II metal vapor then chemically react to form the epitaxial layer.

Claims6

Dependent claims

A method for growing in a reactor vessel a Group II-VI epitaxial layer over a crystalline substrate comprising the steps of:

placing the substrate on a susceptor which is heated to a first predetermined temperature by directing r.f. energy through the susceptor;
directing a flow of a Group II metalorganic into the reactor vessel toward the substrate;
directing a flow of a Group VI metalorganic into the reactor vessel toward said substrate;
directing a flow of a carrier gas over a Group II metal provided in a separately heated reservoir disposed outside of the reactor vessel to provide a composite flow of the carrier gas and Group II metal;
directing the composite flow of the carrier gas and Group II metal into the reactor vessel toward the substrate;
directing radiation towards the reactor vessel to warm the source of Group II metal and the zone of the reactor vessel between the Group II metal source and the substrate;
and
chemically reacting the directed flows of Group II metalorganic, Group VI metalorganic and Group II metal to form the epitaxial layer over the substrate.

5 more elements

Dependencies are inferred from the claim text.

Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials

Life of this patent

Metalorganic vapor phase epitaxial growth of group II-VI semiconductor materials

Life of this patent

Abstract

Claims6